Large Chip High Power Deep Ultraviolet Light-Emitting Diodes

スポンサーリンク

概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2010-06-25

著者

• Yang Jinfeng

  Sumitomo Heavy Industries Ltd.

• Sun Wenhong

  Department Of Electrical Engineering University Of South Carolina

• Yang J

  Department Of Ee University Of South Carolina

• Wu S

  Tung‐fung Junior Coll. Technol. And Commerce Kaohsiung Twn

• SHUR Michael

  Sensor Electronic Technology Inc.,

• GASKA Remis

  Sensor Electronic Technology Inc.,

• Shatalov Maxim

  Department Of Electrical Engineering University Of South Carolina

• HU Xuhong

  Sensor Electronic Technology, Inc.

• DENG Jianyu

  Sensor Electronic Technology, Inc.

• Deng Jianyu

  Sensor Electronic Technology Inc.

• Bilenko Yuriy

  Sensor Electronic Technology Inc.

• WRABACK Michael

  U.S. Army Research Laboratory, Sensors and Electron Devices Directorate, RDRL-SEE-M

• Wu Shuai

  Department Of Electrical Engineering University Of South Carolina

• Yang J

  Ipec

• Gaska Remis

  Sensor Electronic Technology Inc.

• Shur Michael

  Sensor Electronic Technology Inc.

• SHATALOV Max

  Sensor Electronic Technology, Inc.

• SUN Wenhong

  Sensor Electronic Technology, Inc.

• BILENKO Yuri

  Sensor Electronic Technology, Inc.

• SATTU Ajay

  Sensor Electronic Technology, Inc.

• YANG Jinwei

  Sensor Electronic Technology, Inc.

• MOE Craig

  U.S. Army Research Laboratory

• Sattu Ajay

  Sensor Electronic Technology Inc.

• Hu Xuhong

  Sensor Electronic Technology Inc.

• Wraback Michael

  U.s. Army Research Laboratory

関連論文

• Stable High-Brightness Electron Beam System with a Photocathode RF Gun for Short Pulse X-Ray Generation by Thomson Scattering
• Short-Pulse X-Ray Generation via Thomson Scattering in 0° and 90° Interactions
• The Characterization of Surface Acoustic Wave Modes on Rotated Y-Cut Quartz (ST-X Quartz) with Different AIN Film Thickness
• Temperature Compensation With AlN Film on Y-128° LiNbO_3 : Surfaces, Interfaces, and Films
• Terahertz Radiation from Nonpolar InN Due to Drift in an Intrinsic In-Plane Electric Field
• Differential Carrier Lifetime in AlGaN Based Multiple Quantum Well Deep UV Light Emitting Diodes at 325 nm : Semiconductors
• AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor : Semiconductors
• Low Threshold-14W/mm ZrO_2/AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors
• 10Milliwatt Pulse Operation of 265nm AlGaN Light Emitting Diodes
• Planar Schottky Diodes on High Quality A-plane GaN
• Sputtering Highly C-Axis-Oriented AIN Films on Y-128° LiNbO_3
• Influence of Substrate Temperature to Prepare C-Axis-Oriented AlN Films on Rotated Y-cut Quartz(ST-Quartz)
• Ultraviolet Light Emitting Diodes Using Non-Polar a-Plane GaN-ALGaN Multiple Quantum Wells
• A New Selective Area Lateral Epitaxy Approach for Depositing a-Plane GaN over r-Plane Sapphire
• Lateral Epitaxial Overgrowth of Fully Coalesced A-Plane GaN on R-Plane Sapphire
• Lateral Current Crowding in Deep UV Light Emitting Diodes over Sapphire Substrates
• Pulsed Metalorganic Chemical Vapor Deposition of Quaternary AlInGaN Layers and Multiple Quantum Wells for Ultraviolet Light Emission
• 324 nm Light Emitting Diodes With MilliWatt Powers : Semiconductors
• Submilliwatt Operation of AllnGaN Based Multifinger-Design 315 nm Light Emitting Diode (LED) over Sapphire Substrate : Semiconductors
• Stripe Geometry Ultraviolet Light Emitting Diodes at 305 Nanometers Using Quaternary AlInGaN Multiple Quantum Wells : Semiconductors
• Quaternary AlInGaN Multiple Quantum Wells for Ultraviolet Light Emitting Diodes : Semiconductors
• Characteristics under Bias-Temperature-Stress of Cu/Low-k a-SiCO: H Structures Prepared by Plasma Enhanced Chemical Vapor Deposition Using a Hexamethyldisilane Precursor and Cu Sputtering
• Effects of Post-Deposition Heat Treatment on the Properties of Low Dielectric Constant Plasma Polymerized Decahydronaphthalene Thin Films Deposited by Plasma-Enhanced Chemical Vapor Deposition
• Matrix Addressable Micro-Pixel 280nm Deep UV Light-Emitting Diodes
• Optically Pumped Lasing at 353nm Using Non-polar a-plane AlGaN Multiple Quantum Wells over r-plane Sapphire
• Micro-pixel Design Milliwatt Power 254nm Emission Light Emitting Diodes
• Sub-Milliwatt Power III-N Light Emitting Diodes at 285 nm
• Continuous Wave Milliwatt Power AlGaN Light Emitting Diodes at 280nm
• Large Chip High Power Deep Ultraviolet Light-Emitting Diodes
• Nucleation Enhancement of Diamond via Electron Cyclotron Resonance Plasma
• A Static Model for Scratches Generated during Aluminum Chemical-Mechanical Polishing Process : Orbital Technology
• 247 nm Ultra-Violet Light Emitting Diodes
• Correlations between the Growth Modes and Luminescence Properties of AlGaN Quantum Structures
• Room-Temperature Stimulated Emission from AlN at 214 nm
• AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
• AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
• AlGaN Deep-Ultraviolet Light-Emitting Diodes
• 10 Milliwatt Pulse Operation of 265 nm AlGaN Light Emitting Diodes
• Continuous Wave Milliwatt Power AlGaN Light Emitting Diodes at 280 nm
• In-Well Pumped Blue GaN-Based Vertical-External-Cavity Surface-Emitting Lasers
• Short-Pulse X-Ray Generation via Thomson Scattering in 0° and 90° Interactions
• In-Well Pumped Blue GaN-Based Vertical-External-Cavity Surface-Emitting Lasers

もっと見る 閉じる

スポンサーリンク