Correlations between the Growth Modes and Luminescence Properties of AlGaN Quantum Structures
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概要
- 論文の詳細を見る
AlGaN-based quantum structures were grown using gas-source molecular beam epitaxy with ammonia. Quantum structures are formed in the wells of Al0.4Ga0.6N/Al0.55Ga0.45N superlattices, as confirmed by transmission electron microscopy. Optical properties are investigated using cathodoluminescence and time-resolved photoluminescence. We obtain ${\sim}60$ fold intensity enhancement over two-dimensional growth. For conditions corresponding to deposition of ${\sim}10$ monolayers of well material, we obtain narrow emission at 280 nm and long ${\sim}320$ ps photoluminescence decay time.
- 2008-03-25
著者
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Shen Hongen
U.s. Army Research Laboratory Sensors And Electron Devices Directorate Rdrl-see-m
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Wraback Michael
U.s. Army Research Laboratory
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Sampath Anand
U.S. Army Research Laboratory, AMSRD-ARL-SE-EM, Adelphi, MD 20783, U.S.A.
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Borisov Boris
Nano Tech Center, Texas Tech University, Lubbock, TX 79409, U.S.A.
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Nikishin Sergey
Nano Tech Center, Texas Tech University, Lubbock, TX 79409, U.S.A.
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Kuryatkov Vladimir
Nano Tech Center, Texas Tech University, Lubbock, TX 79409, U.S.A.
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Holtz Mark
Nano Tech Center, Texas Tech University, Lubbock, TX 79409, U.S.A.
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Garrett Gregory
U.S. Army Research Laboratory, AMSRD-ARL-SE-EM, Adelphi, MD 20783, U.S.A.
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Sarney Wendy
U.S. Army Research Laboratory, AMSRD-ARL-SE-EM, Adelphi, MD 20783, U.S.A.
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Wraback Michael
U.S. Army Research Laboratory, AMSRD-ARL-SE-EM, Adelphi, MD 20783, U.S.A.
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Shen Hongen
U.S. Army Research Laboratory, AMSRD-ARL-SE-EM, Adelphi, MD 20783, U.S.A.
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