Digital Alloys of AlN/AlGaN for Deep UV Light Emitting Diodes

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概要

• 論文の詳細を見る

• We report a systematic study of the optical and electrical properties of deep ultraviolet light emitting diodes based on digital alloy structures of AlN/Al0.08Ga0.92N grown by gas source molecular beam epitaxy with ammonia. Digital alloys are formed by short period superlattices consisting of Al0.08Ga0.92N wells, 0.50 or 0.75 nm thick, and AlN barriers, 0.75 to 1.5 nm thick. For digital alloys with effective bandgap of 5.1 eV, average AlN composition 72%, we obtain room temperature electron concentrations up to $1\times 10^{19}$ cm-3 and resistivity of 0.005 $\Omega$$\cdot$cm and hole concentrations of $1\times 10^{18}$ cm-3 with resistivity of 6 $\Omega$$\cdot$cm. Light emitting diodes based on digital alloys are demonstrated operating in the range of 250 to 290 nm.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-10-15

著者

• Nikishin Sergey

  Nano Tech Center, Texas Tech University, Lubbock, TX 79409, U.S.A.

• Holtz Mark

  Nano Tech Center, Texas Tech University, Lubbock, TX 79409, U.S.A.

• Temkin Henryk

  Nano Tech Center, Texas Tech University, Lubbock, TX 79409, U.S.A.

関連論文

• Correlations between the Growth Modes and Luminescence Properties of AlGaN Quantum Structures
• Digital Alloys of AlN/AlGaN for Deep UV Light Emitting Diodes

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