In-Well Pumped Blue GaN-Based Vertical-External-Cavity Surface-Emitting Lasers
スポンサーリンク
概要
- 論文の詳細を見る
We describe the properties of in-well pumped blue InGaN/GaN vertical-external-cavity surface-emitting lasers. The laser hetero-structures were deposited on bulk GaN substrates by using metal--organic vapor phase epitaxy near atmospheric pressure. The active zones are comprised of up to 20 InGaN quantum wells distributed in a resonant periodic gain configuration. High-reflectivity dielectric distributed Bragg-reflectors were used as mirrors. Lasing was achieved at a wavelength of about 440--445 nm by exclusively exciting the quantum wells with the 384 nm emission line of a dye/N<inf>2</inf>laser. The laser threshold was about 240 kW/cm<sup>2</sup>. The small pump spot diameter of about 20 μm and the usage of dielectric mirrors result in a rather high thermal resistance, which was experimentally determined by using an all optical measurement technique based on the temperature-dependent change of the refractive index of the device.
- 2013-08-25
著者
-
Wraback Michael
U.s. Army Research Laboratory
-
Johnson Noble
Palo Alto Research Center Inc.
-
WUNDERER Thomas
Palo Alto Research Center, Inc.
-
NORTHRUP John
Palo Alto Research Center, Inc.
-
Yang Zhihong
Palo Alto Research Center Inc., 3333 Coyote Hill Road, Palo Alto, CA 94304, U.S.A.
-
Teepe Mark
Palo Alto Research Center Inc., 3333 Coyote Hill Road, Palo Alto, CA 94304, U.S.A.
-
Northrup John
Palo Alto Research Center, Inc., 3333 Coyote Hill Road, Palo Alto, CA 94304, U.S.A.
-
Rotella Paul
U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD 20783, U.S.A.
-
Johnson Noble
Palo Alto Research Center, Inc., 3333 Coyote Hill Road, Palo Alto, CA 94304, U.S.A.
-
Teepe Mark
Palo Alto Research Center, Inc., 3333 Coyote Hill Road, Palo Alto, CA 94304, U.S.A.
-
Wunderer Thomas
Palo Alto Research Center, Inc., 3333 Coyote Hill Road, Palo Alto, CA 94304, U.S.A.
関連論文
- Terahertz Radiation from Nonpolar InN Due to Drift in an Intrinsic In-Plane Electric Field
- Large Chip High Power Deep Ultraviolet Light-Emitting Diodes
- Correlations between the Growth Modes and Luminescence Properties of AlGaN Quantum Structures
- Pseudomorphically Grown Ultraviolet C Photopumped Lasers on Bulk AlN Substrates
- AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
- Ultraviolet InAlGaN Light Emitting Diodes Grown on Hydride Vapor Phase Epitaxy AlGaN/Sapphire Templates
- Effects of an Electrically Conducting Layer at the Zinc Oxide Surface
- Electronic Structure and Mobility of Alkylated and Nonalkylated Organic Semiconductors: Role of van der Waals Interactions
- In-Well Pumped Blue GaN-Based Vertical-External-Cavity Surface-Emitting Lasers
- In-Well Pumped Blue GaN-Based Vertical-External-Cavity Surface-Emitting Lasers