In-Well Pumped Blue GaN-Based Vertical-External-Cavity Surface-Emitting Lasers

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概要

• 論文の詳細を見る

• We describe the properties of in-well pumped blue InGaN/GaN vertical-external-cavity surface-emitting lasers. The laser hetero-structures were deposited on bulk GaN substrates by using metal--organic vapor phase epitaxy near atmospheric pressure. The active zones are comprised of up to 20 InGaN quantum wells distributed in a resonant periodic gain configuration. High-reflectivity dielectric distributed Bragg-reflectors were used as mirrors. Lasing was achieved at a wavelength of about 440--445 nm by exclusively exciting the quantum wells with the 384 nm emission line of a dye/N<inf>2</inf>laser. The laser threshold was about 240 kW/cm². The small pump spot diameter of about 20 μm and the usage of dielectric mirrors result in a rather high thermal resistance, which was experimentally determined by using an all optical measurement technique based on the temperature-dependent change of the refractive index of the device.

• The Japan Society of Applied Physicsの論文
• 2013-08-25

著者

• Wraback Michael

  U.s. Army Research Laboratory

• Johnson Noble

  Palo Alto Research Center Inc.

• WUNDERER Thomas

  Palo Alto Research Center, Inc.

• Yang Zhihong

  Palo Alto Research Center Inc., 3333 Coyote Hill Road, Palo Alto, CA 94304, U.S.A.

• Teepe Mark

  Palo Alto Research Center Inc., 3333 Coyote Hill Road, Palo Alto, CA 94304, U.S.A.

• Rotella Paul

  U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD 20783, U.S.A.

• Wunderer Thomas

  Palo Alto Research Center, Inc., 3333 Coyote Hill Road, Palo Alto, CA 94304, U.S.A.

• Northrup John

  Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304, U.S.A.

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