Room-Temperature Stimulated Emission from AlN at 214 nm

スポンサーリンク

概要

• 論文の詳細を見る

• We report the first ever room temperature (RT) stimulated emission at 214 nm using high quality AlN layers that were grown over patterned sapphire substrates by pulsed lateral epitaxial overgrowth (PLOG) process. The PLOG process yielded fully coalesced layers with total thicknesses in excess of 10 μm resulting in a reduction in the threading dislocation density by several orders. The stimulated emission was achieved at 214 nm under pulsed optical pumping at RT. The RT threshold optical power density was approximately 9 MW/cm2 and the stimulated edge-emission signal was strongly polarized with $E\parallel c$.

• 2006-12-25

著者

• Adivarahan Vinod

  Department Of Ee University Of South Carolina

• Shatalov Maxim

  Department Of Electrical Engineering University Of South Carolina

• GAEVSKI Mikhail

  Department of Electrical Engineering, University of South Carolina

• Khan Asif

  Department Of Ece University Of South Carolina

• Gaevski Mikhail

  Department of Electrical Engineering, University of South Carolina, 301 S. Main Street, Columbia, South Carolina 29208, U.S.A

• Shatalov Maxim

  Department of Electrical Engineering, University of South Carolina, 301 S. Main Street, Columbia, South Carolina 29208, U.S.A

関連論文

• Differential Carrier Lifetime in AlGaN Based Multiple Quantum Well Deep UV Light Emitting Diodes at 325 nm : Semiconductors
• AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor : Semiconductors
• Room-Temperature Stimulated Emission from AlN at 214nm
• Low Threshold-14W/mm ZrO_2/AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors
• 10Milliwatt Pulse Operation of 265nm AlGaN Light Emitting Diodes
• Planar Schottky Diodes on High Quality A-plane GaN
• 280nm Deep Ultraviolet Light Emitting Diode Lamp with an AlGaN Multiple Quantum Well Active Region
• Vertical Injection Thin Film Deep Ultraviolet Light Emitting Diodes with AlGaN Multiple-Quantum Wells Active Region
• Ultraviolet Light Emitting Diodes Using Non-Polar a-Plane GaN-ALGaN Multiple Quantum Wells
• A New Selective Area Lateral Epitaxy Approach for Depositing a-Plane GaN over r-Plane Sapphire
• Lateral Epitaxial Overgrowth of Fully Coalesced A-Plane GaN on R-Plane Sapphire
• Lateral Current Crowding in Deep UV Light Emitting Diodes over Sapphire Substrates
• 324 nm Light Emitting Diodes With MilliWatt Powers : Semiconductors
• Submilliwatt Operation of AllnGaN Based Multifinger-Design 315 nm Light Emitting Diode (LED) over Sapphire Substrate : Semiconductors
• Stripe Geometry Ultraviolet Light Emitting Diodes at 305 Nanometers Using Quaternary AlInGaN Multiple Quantum Wells : Semiconductors
• Quaternary AlInGaN Multiple Quantum Wells for Ultraviolet Light Emitting Diodes : Semiconductors
• Matrix Addressable Micro-Pixel 280nm Deep UV Light-Emitting Diodes
• Optically Pumped Lasing at 353nm Using Non-polar a-plane AlGaN Multiple Quantum Wells over r-plane Sapphire
• Micro-pixel Design Milliwatt Power 254nm Emission Light Emitting Diodes
• Sub-Milliwatt Power III-N Light Emitting Diodes at 285 nm
• Continuous Wave Milliwatt Power AlGaN Light Emitting Diodes at 280nm
• Large Chip High Power Deep Ultraviolet Light-Emitting Diodes
• 276 nm Substrate-Free Flip-Chip AlGaN Light-Emitting Diodes
• A Hybrid Micro-Pixel Based Deep Ultraviolet Light-Emitting Diode Lamp
• Robust 290 nm Emission Light Emitting Diodes over Pulsed Laterally Overgrown AlN
• Physics of GaN Based Electronic Devices
• Ultraviolet Stimulated Emission From Optically Pumped AlGaN/AlGaN Multiple Quantum Wells on Pulsed Laterally Overgrown a-Plane GaN
• Robust 285 nm Deep UV Light Emitting Diodes over Metal Organic Hydride Vapor Phase Epitaxially Grown AlN/Sapphire Templates
• Room-Temperature Stimulated Emission from AlN at 214 nm
• Enhancement-Mode Insulating-Gate AlInN/AlN/GaN Heterostructure Field-Effect Transistors with Threshold Voltage in Excess of +1.5V
• 10 Milliwatt Pulse Operation of 265 nm AlGaN Light Emitting Diodes
• Metal–Organic Hydride Vapor Phase Epitaxy of AlxGa1-xN Films over Sapphire
• Low Threshold-14 W/mm ZrO2/AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field Effect Transistors
• Continuous Wave Milliwatt Power AlGaN Light Emitting Diodes at 280 nm
• Substrate Lifted-off AlGaN/AlGaN Lateral Conduction Thin-Film Light-Emitting Diodes Operating at 285 nm
• Substrate Lifted-off AlGaN/AlGaN Lateral Conduction Thin-Film Light-Emitting Diodes Operating at 285 nm (Special Issue : Recent Advances in Nitride Semiconductors)

もっと見る 閉じる

スポンサーリンク