Continuous Wave Milliwatt Power AlGaN Light Emitting Diodes at 280 nm
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概要
- 論文の詳細を見る
We report on deep ultraviolet light emitting diodes using AlGaN multiple quantum well active regions and with peak emission at 280 nm. A new buffer layer and active region design resulted in flip-chip devices with continuous wave powers as high as 0.85 mW for a pump current of 20 mA and a record external quantum efficiency over 1%. The power saturated at 5 mW for a dc pump current of 200 mA.
- Japan Society of Applied Physicsの論文
- 2004-11-01
著者
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Sun Wenhong
Department Of Electrical Engineering University Of South Carolina
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Yang Jinwei
Department Of Ee University Of South Carolina
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Adivarahan Vinod
Department Of Ee University Of South Carolina
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Shatalov Maxim
Department Of Electrical Engineering University Of South Carolina
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Zhang Jianping
Department Of Electrical Engineering University Of South Carolina
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Lee Youngbae
Department Of Electrical Engineering University Of South Carolina
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Wu Shuai
Department Of Electrical Engineering University Of South Carolina
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Khan M.
Department Of Analytical Chemistry University Of Barcelona
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Khan M.
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
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Lee Youngbae
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
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Zhang Jianping
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
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Wu Shuai
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
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