Room-Temperature Stimulated Emission from AlN at 214nm
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2006-12-25
著者
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Khan Asif
Department Of Ee University Of South Carolina
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Adivarahan Vinod
Department Of Ee University Of South Carolina
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SHATALOV Maxim
Department of Electrical Engineering. University of South Carolina
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GAEVSKI Mikhail
Department of Electrical Engineering, University of South Carolina
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Gaevski. Michael
Department Of Electrical Engineering University Of South Carolina
関連論文
- Differential Carrier Lifetime in AlGaN Based Multiple Quantum Well Deep UV Light Emitting Diodes at 325 nm : Semiconductors
- AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor : Semiconductors
- Room-Temperature Stimulated Emission from AlN at 214nm
- Low Threshold-14W/mm ZrO_2/AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors
- 10Milliwatt Pulse Operation of 265nm AlGaN Light Emitting Diodes
- Planar Schottky Diodes on High Quality A-plane GaN
- 280nm Deep Ultraviolet Light Emitting Diode Lamp with an AlGaN Multiple Quantum Well Active Region
- Vertical Injection Thin Film Deep Ultraviolet Light Emitting Diodes with AlGaN Multiple-Quantum Wells Active Region
- Ultraviolet Light Emitting Diodes Using Non-Polar a-Plane GaN-ALGaN Multiple Quantum Wells
- A New Selective Area Lateral Epitaxy Approach for Depositing a-Plane GaN over r-Plane Sapphire
- Lateral Epitaxial Overgrowth of Fully Coalesced A-Plane GaN on R-Plane Sapphire
- Lateral Current Crowding in Deep UV Light Emitting Diodes over Sapphire Substrates
- 324 nm Light Emitting Diodes With MilliWatt Powers : Semiconductors
- Submilliwatt Operation of AllnGaN Based Multifinger-Design 315 nm Light Emitting Diode (LED) over Sapphire Substrate : Semiconductors
- Stripe Geometry Ultraviolet Light Emitting Diodes at 305 Nanometers Using Quaternary AlInGaN Multiple Quantum Wells : Semiconductors
- Quaternary AlInGaN Multiple Quantum Wells for Ultraviolet Light Emitting Diodes : Semiconductors
- Matrix Addressable Micro-Pixel 280nm Deep UV Light-Emitting Diodes
- Optically Pumped Lasing at 353nm Using Non-polar a-plane AlGaN Multiple Quantum Wells over r-plane Sapphire
- Micro-pixel Design Milliwatt Power 254nm Emission Light Emitting Diodes
- Sub-Milliwatt Power III-N Light Emitting Diodes at 285 nm
- Continuous Wave Milliwatt Power AlGaN Light Emitting Diodes at 280nm
- Robust 290 nm Emission Light Emitting Diodes over Pulsed Laterally Overgrown AlN
- Robust 285 nm Deep UV Light Emitting Diodes over Metal Organic Hydride Vapor Phase Epitaxially Grown AlN/Sapphire Templates
- Room-Temperature Stimulated Emission from AlN at 214 nm
- 10 Milliwatt Pulse Operation of 265 nm AlGaN Light Emitting Diodes
- Metal–Organic Hydride Vapor Phase Epitaxy of AlxGa1-xN Films over Sapphire
- Low Threshold-14 W/mm ZrO2/AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field Effect Transistors
- Continuous Wave Milliwatt Power AlGaN Light Emitting Diodes at 280 nm