10 Milliwatt Pulse Operation of 265 nm AlGaN Light Emitting Diodes
スポンサーリンク
概要
- 論文の詳細を見る
We report on the development of solid-state deep ultraviolet light sources optimized for the germicidal applications. Pulsed power levels in excess of 10 mW were achieved for AlGaN based 265 nm light emitting diodes by improving the material quality using Migration-Enhanced Metal Organic Chemical Vapor Deposition. Packaged devices reached the continuous-wave power of 237 μW at 30 mA and a pulse power exceeding 10 mW for 1.2 A driving current.
- 2005-01-10
著者
-
Sun Wenhong
Department Of Electrical Engineering University Of South Carolina
-
Adivarahan Vinod
Department Of Ee University Of South Carolina
-
Katona Thomas
Sensor Electronic Technology Inc.
-
Shatalov Maxim
Department Of Electrical Engineering University Of South Carolina
-
ZHANG Jianping
Sensor Electronic Technology, Inc.
-
SHUR Michael
Broadband Center, ECSE, and Physics, Rensselaer Polytechnic Institute
-
Khan Asif
Department Of Ece University Of South Carolina
-
Deng Jianyu
Sensor Electronic Technology Inc.
-
Bilenko Yuriy
Sensor Electronic Technology Inc.
-
Gaska Remis
Sensor Electronic Technology Inc.
-
Hu Xuhong
Sensor Electronic Technology Inc.
-
Lunev Alex
Sensor Electronic Technology Inc.
-
Shatalov Maxim
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
-
Gaska Remis
Sensor Electronic Technology, Inc., 1195 Atlas Rd, Columbia, SC 29209, U.S.A.
-
Zhang Jianping
Sensor Electronic Technology, Inc., 1195 Atlas Rd, Columbia, SC 29209, U.S.A.
-
Adivarahan Vinod
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
-
Deng Jianyu
Sensor Electronic Technology, Inc., 1195 Atlas Rd, Columbia, SC 29209, U.S.A.
-
Lunev Alex
Sensor Electronic Technology, Inc., 1195 Atlas Rd, Columbia, SC 29209, U.S.A.
関連論文
- The Characterization of Surface Acoustic Wave Modes on Rotated Y-Cut Quartz (ST-X Quartz) with Different AIN Film Thickness
- Temperature Compensation With AlN Film on Y-128° LiNbO_3 : Surfaces, Interfaces, and Films
- Differential Carrier Lifetime in AlGaN Based Multiple Quantum Well Deep UV Light Emitting Diodes at 325 nm : Semiconductors
- AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor : Semiconductors
- Room-Temperature Stimulated Emission from AlN at 214nm
- Low Threshold-14W/mm ZrO_2/AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors
- 10Milliwatt Pulse Operation of 265nm AlGaN Light Emitting Diodes
- Planar Schottky Diodes on High Quality A-plane GaN
- Sputtering Highly C-Axis-Oriented AIN Films on Y-128° LiNbO_3
- Influence of Substrate Temperature to Prepare C-Axis-Oriented AlN Films on Rotated Y-cut Quartz(ST-Quartz)
- 280nm Deep Ultraviolet Light Emitting Diode Lamp with an AlGaN Multiple Quantum Well Active Region
- Vertical Injection Thin Film Deep Ultraviolet Light Emitting Diodes with AlGaN Multiple-Quantum Wells Active Region
- Ultraviolet Light Emitting Diodes Using Non-Polar a-Plane GaN-ALGaN Multiple Quantum Wells
- A New Selective Area Lateral Epitaxy Approach for Depositing a-Plane GaN over r-Plane Sapphire
- Lateral Epitaxial Overgrowth of Fully Coalesced A-Plane GaN on R-Plane Sapphire
- Lateral Current Crowding in Deep UV Light Emitting Diodes over Sapphire Substrates
- 324 nm Light Emitting Diodes With MilliWatt Powers : Semiconductors
- Submilliwatt Operation of AllnGaN Based Multifinger-Design 315 nm Light Emitting Diode (LED) over Sapphire Substrate : Semiconductors
- Stripe Geometry Ultraviolet Light Emitting Diodes at 305 Nanometers Using Quaternary AlInGaN Multiple Quantum Wells : Semiconductors
- Quaternary AlInGaN Multiple Quantum Wells for Ultraviolet Light Emitting Diodes : Semiconductors
- Matrix Addressable Micro-Pixel 280nm Deep UV Light-Emitting Diodes
- Optically Pumped Lasing at 353nm Using Non-polar a-plane AlGaN Multiple Quantum Wells over r-plane Sapphire
- Micro-pixel Design Milliwatt Power 254nm Emission Light Emitting Diodes
- Sub-Milliwatt Power III-N Light Emitting Diodes at 285 nm
- Continuous Wave Milliwatt Power AlGaN Light Emitting Diodes at 280nm
- Large Chip High Power Deep Ultraviolet Light-Emitting Diodes
- 276 nm Substrate-Free Flip-Chip AlGaN Light-Emitting Diodes
- A Hybrid Micro-Pixel Based Deep Ultraviolet Light-Emitting Diode Lamp
- Robust 290 nm Emission Light Emitting Diodes over Pulsed Laterally Overgrown AlN
- 247 nm Ultra-Violet Light Emitting Diodes
- Physics of GaN Based Electronic Devices
- Ultraviolet Stimulated Emission From Optically Pumped AlGaN/AlGaN Multiple Quantum Wells on Pulsed Laterally Overgrown a-Plane GaN
- Robust 285 nm Deep UV Light Emitting Diodes over Metal Organic Hydride Vapor Phase Epitaxially Grown AlN/Sapphire Templates
- Room-Temperature Stimulated Emission from AlN at 214 nm
- Enhancement-Mode Insulating-Gate AlInN/AlN/GaN Heterostructure Field-Effect Transistors with Threshold Voltage in Excess of +1.5V
- AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
- AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
- AlGaN Deep-Ultraviolet Light-Emitting Diodes
- 10 Milliwatt Pulse Operation of 265 nm AlGaN Light Emitting Diodes
- Metal–Organic Hydride Vapor Phase Epitaxy of AlxGa1-xN Films over Sapphire
- Low Threshold-14 W/mm ZrO2/AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field Effect Transistors
- Continuous Wave Milliwatt Power AlGaN Light Emitting Diodes at 280 nm
- Substrate Lifted-off AlGaN/AlGaN Lateral Conduction Thin-Film Light-Emitting Diodes Operating at 285 nm
- Substrate Lifted-off AlGaN/AlGaN Lateral Conduction Thin-Film Light-Emitting Diodes Operating at 285 nm (Special Issue : Recent Advances in Nitride Semiconductors)