Substrate Lifted-off AlGaN/AlGaN Lateral Conduction Thin-Film Light-Emitting Diodes Operating at 285 nm (Special Issue : Recent Advances in Nitride Semiconductors)
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概要
著者
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Zhang Bin
Nitek Inc.
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Khan Asif
Department Of Ece University Of South Carolina
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Adivarahan Vinod
Nitek Inc.
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Fareed Qhalid
Nitek Inc.
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Lachab Mohamed
Department Of Electrical Engineering University Of South Carolina
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Chen Hung-Chi
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
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Asif Fatima
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
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Coleman Antwon
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
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Zhang Bin
Nitek Inc., 1000 Catawba St., Suite 150, Columbia, SC 29201, U.S.A.
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Ahmad Iftikhar
Nitek Inc., 1000 Catawba St., Suite 150, Columbia, SC 29201, U.S.A.
関連論文
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- 280nm Deep Ultraviolet Light Emitting Diode Lamp with an AlGaN Multiple Quantum Well Active Region
- Vertical Injection Thin Film Deep Ultraviolet Light Emitting Diodes with AlGaN Multiple-Quantum Wells Active Region
- 276 nm Substrate-Free Flip-Chip AlGaN Light-Emitting Diodes
- A Hybrid Micro-Pixel Based Deep Ultraviolet Light-Emitting Diode Lamp
- Robust 290 nm Emission Light Emitting Diodes over Pulsed Laterally Overgrown AlN
- Physics of GaN Based Electronic Devices
- Ultraviolet Stimulated Emission From Optically Pumped AlGaN/AlGaN Multiple Quantum Wells on Pulsed Laterally Overgrown a-Plane GaN
- Robust 285 nm Deep UV Light Emitting Diodes over Metal Organic Hydride Vapor Phase Epitaxially Grown AlN/Sapphire Templates
- Room-Temperature Stimulated Emission from AlN at 214 nm
- First Demonstration of Semipolar Deep Ultraviolet Light Emitting Diode on $m$-Plane Sapphire with AlGaN Multiple Quantum Wells
- Enhancement-Mode Insulating-Gate AlInN/AlN/GaN Heterostructure Field-Effect Transistors with Threshold Voltage in Excess of +1.5V
- ABA-Mediated Heterophylly is Regulated by Differential Expression of 9-cis-Epoxycarotenoid Dioxygenase 3 in Lilies
- 10 Milliwatt Pulse Operation of 265 nm AlGaN Light Emitting Diodes
- Metal–Organic Hydride Vapor Phase Epitaxy of AlxGa1-xN Films over Sapphire
- Substrate Lifted-off AlGaN/AlGaN Lateral Conduction Thin-Film Light-Emitting Diodes Operating at 285 nm
- Substrate Lifted-off AlGaN/AlGaN Lateral Conduction Thin-Film Light-Emitting Diodes Operating at 285 nm (Special Issue : Recent Advances in Nitride Semiconductors)