Vertical Injection Thin Film Deep Ultraviolet Light Emitting Diodes with AlGaN Multiple-Quantum Wells Active Region
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2009-09-25
著者
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Zhang Bin
Nitek Inc.
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Khan Asif
Department Of Ee University Of South Carolina
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Islam Monirul
Department Of Human And Artificial Intelligent Systems Faculty Of Engineering Fukui University
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Khan Asif
Department Of Electrical Engineering University Of South Carolina
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Khan Asif
Department Of Ece University Of South Carolina
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ADIVARAHAN Vinod
Nitek, Inc.
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HEIDARI Ahmad
Nitek, Inc.
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FAREED Qhalid
Nitek, Inc.
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HWANG Seongmo
Department of Electrical Engineering, University of South Carolina
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BALAKRISHNAN Krishnan
Department of Electrical Engineering, University of South Carolina
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Heidari Ahmad
Nitek Inc.
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Hwang Seongmo
Department Of Electrical Engineering University Of South Carolina
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Islam Monirul
Department Of Electrical Engineering University Of South Carolina
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Balakrishnan Krishnan
Department Of Electrical Engineering University Of South Carolina
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Adivarahan Vinod
Nitek Inc.
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Fareed Qhalid
Nitek Inc.
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- Robust 285 nm Deep UV Light Emitting Diodes over Metal Organic Hydride Vapor Phase Epitaxially Grown AlN/Sapphire Templates
- Room-Temperature Stimulated Emission from AlN at 214 nm
- First Demonstration of Semipolar Deep Ultraviolet Light Emitting Diode on $m$-Plane Sapphire with AlGaN Multiple Quantum Wells
- Enhancement-Mode Insulating-Gate AlInN/AlN/GaN Heterostructure Field-Effect Transistors with Threshold Voltage in Excess of +1.5V
- 10 Milliwatt Pulse Operation of 265 nm AlGaN Light Emitting Diodes
- Metal–Organic Hydride Vapor Phase Epitaxy of AlxGa1-xN Films over Sapphire
- Substrate Lifted-off AlGaN/AlGaN Lateral Conduction Thin-Film Light-Emitting Diodes Operating at 285 nm
- Substrate Lifted-off AlGaN/AlGaN Lateral Conduction Thin-Film Light-Emitting Diodes Operating at 285 nm (Special Issue : Recent Advances in Nitride Semiconductors)