Substrate Lifted-off AlGaN/AlGaN Lateral Conduction Thin-Film Light-Emitting Diodes Operating at 285 nm
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概要
- 論文の詳細を見る
We report on the substrate laser lift-off (LLO) in lateral conduction flip-chip (FC) deep-UV light-emitting diodes (LEDs) with peak emission wavelength at 285 nm. The AlGaN-based LED epilayer structure was grown on a low-defect 2 μm-thick AlN/sapphire template and processed into 3\times 3 small periphery pixel-LED arrays. The total p-contact area of the 9 pixel, single chip devices was 180 \times 180 μm<sup>2</sup>. Our results show that the use of FC die assembly with epoxy underfilling the gap between the chip and the submount dramatically increase the yield of damage-free debonding of sapphire and the overlying AlN layer. Equally important, no noticeable degradation of the electrical and optical characteristics of the thin-film light emitters was observed following the LLO process.
- 2013-08-25
著者
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Zhang Bin
Nitek Inc.
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Khan Asif
Department Of Ece University Of South Carolina
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Adivarahan Vinod
Nitek Inc.
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Fareed Qhalid
Nitek Inc.
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Lachab Mohamed
Department Of Electrical Engineering University Of South Carolina
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Ahmad Iftikhar
Nitek, Inc., 1804 Salem Church Road, Irmo, SC 29063, U.S.A.
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Khan Asif
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
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Chen Hung-Chi
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
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Asif Fatima
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
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Coleman Antwon
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
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Adivarahan Vinod
Nitek Inc., 1000 Catawba St., Suite 150, Columbia, SC 29201, U.S.A.
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Ahmad Iftikhar
Nitek Inc., 1000 Catawba St., Suite 150, Columbia, SC 29201, U.S.A.
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