Robust 285 nm Deep UV Light Emitting Diodes over Metal Organic Hydride Vapor Phase Epitaxially Grown AlN/Sapphire Templates

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概要

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• Highly stable deep UV light emitting diodes (LEDs) with peak emission wavelength of 285 nm are reported. The LEDs were deposited via pulsed atomic layer epitaxy over a 15-μm-thick aluminum nitride-sapphire template which was prepared by metalorganic hydride vapor phase epitaxy (MOHVPE). The devices exhibited a stable output power density of 16 W/cm2 at 2 kA/cm2 during cw operation and for unpackaged on-wafer devices cw-power did not saturate till current density of 4 kA/cm2. In contrast, conventional UV LEDs grown on sapphire substrates saturated at approximately 0.5 kA/cm2. The lifetime of MOHVPE LED is estimated to be well over 5000 h. We attribute this superior performance of the MOHVPE LEDs to reduced thermal impedance due to the thick AlN–sapphire template.

• 2007-06-25

著者

• Adivarahan Vinod

  Department Of Ee University Of South Carolina

• GAEVSKI Mikhail

  Department of Electrical Engineering, University of South Carolina

• Khan Asif

  Department Of Ece University Of South Carolina

• Fareed Qhalid

  Department Of Electrical Engineering University Of South Carolina

• Srivastava Surendra

  Department of Electrical Engineering, University of South Carolina, 301 S. Main Street, Columbia, South Carolina 29208, U.S.A.

• Katona Thomas

  Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.

• Gaevski Mikhail

  Department of Electrical Engineering, University of South Carolina, 301 S. Main Street, Columbia, South Carolina 29208, U.S.A.

• Katona Thomas

  Department of Electrical Engineering, University of South Carolina, 301 S. Main Street, Columbia, South Carolina 29208, U.S.A.

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