Enhancement-Mode Insulating-Gate AlInN/AlN/GaN Heterostructure Field-Effect Transistors with Threshold Voltage in Excess of +1.5V

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2011-11-25

著者

• Khan Asif

  Department Of Electrical Engineering University Of South Carolina

• Khan Asif

  Department Of Ece University Of South Carolina

• Adivarahan Vinod

  Nitek Inc.

• Fareed Qhalid

  Nitek Inc.

• Lachab Mohamed

  Department Of Electrical Engineering University Of South Carolina

• MORGAN Daniel

  Nitek Inc.

• SULTANA Mahbuba

  Department of Electrical Engineering, University of South Carolina

• FATIMA Husna

  Nitek Inc.

• SUGIYAMA Sho

  Department of Electrical Engineering, University of South Carolina

• Sugiyama Sho

  Department Of Electrical Engineering University Of South Carolina

• Sultana Mahbuba

  Department Of Electrical Engineering University Of South Carolina

関連論文

• AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor : Semiconductors
• 10Milliwatt Pulse Operation of 265nm AlGaN Light Emitting Diodes
• 280nm Deep Ultraviolet Light Emitting Diode Lamp with an AlGaN Multiple Quantum Well Active Region
• Vertical Injection Thin Film Deep Ultraviolet Light Emitting Diodes with AlGaN Multiple-Quantum Wells Active Region
• 276 nm Substrate-Free Flip-Chip AlGaN Light-Emitting Diodes
• A Hybrid Micro-Pixel Based Deep Ultraviolet Light-Emitting Diode Lamp
• Robust 290 nm Emission Light Emitting Diodes over Pulsed Laterally Overgrown AlN
• Physics of GaN Based Electronic Devices
• Ultraviolet Stimulated Emission From Optically Pumped AlGaN/AlGaN Multiple Quantum Wells on Pulsed Laterally Overgrown a-Plane GaN
• Robust 285 nm Deep UV Light Emitting Diodes over Metal Organic Hydride Vapor Phase Epitaxially Grown AlN/Sapphire Templates
• Room-Temperature Stimulated Emission from AlN at 214 nm
• First Demonstration of Semipolar Deep Ultraviolet Light Emitting Diode on $m$-Plane Sapphire with AlGaN Multiple Quantum Wells
• Enhancement-Mode Insulating-Gate AlInN/AlN/GaN Heterostructure Field-Effect Transistors with Threshold Voltage in Excess of +1.5V
• 10 Milliwatt Pulse Operation of 265 nm AlGaN Light Emitting Diodes
• Metal–Organic Hydride Vapor Phase Epitaxy of AlxGa1-xN Films over Sapphire
• 2PT161 硬骨魚類の祖先型ヘモグロビン遺伝子の設計・合成および大腸菌内発現(日本生物物理学会第50回年会(2012年度))
• Substrate Lifted-off AlGaN/AlGaN Lateral Conduction Thin-Film Light-Emitting Diodes Operating at 285 nm
• Substrate Lifted-off AlGaN/AlGaN Lateral Conduction Thin-Film Light-Emitting Diodes Operating at 285 nm (Special Issue : Recent Advances in Nitride Semiconductors)

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