Physics of GaN Based Electronic Devices
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概要
- 論文の詳細を見る
- 2000-08-28
著者
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Khan Asif
Department Of Ece University Of South Carolina
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SHUR M.
CIEEM and Department of ECSE, Rensselaer Polytechnic Institute
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GASKA R.
Sensor Electronic Technology, Inc.
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Shur M.
Cieem And Department Of Ecse Rensselaer Polytechnic Institute
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Gaska R.
Sensor Electronic Technology Inc.
関連論文
- AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor : Semiconductors
- 10Milliwatt Pulse Operation of 265nm AlGaN Light Emitting Diodes
- 280nm Deep Ultraviolet Light Emitting Diode Lamp with an AlGaN Multiple Quantum Well Active Region
- Vertical Injection Thin Film Deep Ultraviolet Light Emitting Diodes with AlGaN Multiple-Quantum Wells Active Region
- 276 nm Substrate-Free Flip-Chip AlGaN Light-Emitting Diodes
- A Hybrid Micro-Pixel Based Deep Ultraviolet Light-Emitting Diode Lamp
- Robust 290 nm Emission Light Emitting Diodes over Pulsed Laterally Overgrown AlN
- Physics of GaN Based Electronic Devices
- Simulation of AlGaN/GaN Heterostructure Field Effect Transistors
- Physics of AlGaN/GaN Electronic and Photonic Devices
- Ultraviolet Stimulated Emission From Optically Pumped AlGaN/AlGaN Multiple Quantum Wells on Pulsed Laterally Overgrown a-Plane GaN
- Robust 285 nm Deep UV Light Emitting Diodes over Metal Organic Hydride Vapor Phase Epitaxially Grown AlN/Sapphire Templates
- Room-Temperature Stimulated Emission from AlN at 214 nm
- Enhancement-Mode Insulating-Gate AlInN/AlN/GaN Heterostructure Field-Effect Transistors with Threshold Voltage in Excess of +1.5V
- 10 Milliwatt Pulse Operation of 265 nm AlGaN Light Emitting Diodes
- Metal–Organic Hydride Vapor Phase Epitaxy of AlxGa1-xN Films over Sapphire
- Substrate Lifted-off AlGaN/AlGaN Lateral Conduction Thin-Film Light-Emitting Diodes Operating at 285 nm
- Substrate Lifted-off AlGaN/AlGaN Lateral Conduction Thin-Film Light-Emitting Diodes Operating at 285 nm (Special Issue : Recent Advances in Nitride Semiconductors)