280nm Deep Ultraviolet Light Emitting Diode Lamp with an AlGaN Multiple Quantum Well Active Region

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概要

• 論文の詳細を見る
• 2009-10-25

著者

• Zhang Bin

  Nitek Inc.

• Khan Asif

  Department Of Ee University Of South Carolina

• Islam Monirul

  Department Of Human And Artificial Intelligent Systems Faculty Of Engineering Fukui University

• Khan Asif

  Department Of Electrical Engineering University Of South Carolina

• Khan Asif

  Department Of Ece University Of South Carolina

• ADIVARAHAN Vinod

  Nitek, Inc.

• HEIDARI Ahmad

  Nitek, Inc.

• FAREED Qhalid

  Nitek, Inc.

• HWANG Seongmo

  Department of Electrical Engineering, University of South Carolina

• Heidari Ahmad

  Nitek Inc.

• Hwang Seongmo

  Department Of Electrical Engineering University Of South Carolina

• Islam Monirul

  Department Of Electrical Engineering University Of South Carolina

• Adivarahan Vinod

  Nitek Inc.

• Fareed Qhalid

  Nitek Inc.

関連論文

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• A GA-Based Evolutionary System for Evolving Artificial Neural Networks with Connectionist Learning
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• Room-Temperature Stimulated Emission from AlN at 214nm
• Low Threshold-14W/mm ZrO_2/AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors
• 10Milliwatt Pulse Operation of 265nm AlGaN Light Emitting Diodes
• Planar Schottky Diodes on High Quality A-plane GaN
• 280nm Deep Ultraviolet Light Emitting Diode Lamp with an AlGaN Multiple Quantum Well Active Region
• Vertical Injection Thin Film Deep Ultraviolet Light Emitting Diodes with AlGaN Multiple-Quantum Wells Active Region
• 276 nm Substrate-Free Flip-Chip AlGaN Light-Emitting Diodes
• A Hybrid Micro-Pixel Based Deep Ultraviolet Light-Emitting Diode Lamp
• Robust 290 nm Emission Light Emitting Diodes over Pulsed Laterally Overgrown AlN
• Physics of GaN Based Electronic Devices
• Ultraviolet Stimulated Emission From Optically Pumped AlGaN/AlGaN Multiple Quantum Wells on Pulsed Laterally Overgrown a-Plane GaN
• Robust 285 nm Deep UV Light Emitting Diodes over Metal Organic Hydride Vapor Phase Epitaxially Grown AlN/Sapphire Templates
• Room-Temperature Stimulated Emission from AlN at 214 nm
• First Demonstration of Semipolar Deep Ultraviolet Light Emitting Diode on $m$-Plane Sapphire with AlGaN Multiple Quantum Wells
• Enhancement-Mode Insulating-Gate AlInN/AlN/GaN Heterostructure Field-Effect Transistors with Threshold Voltage in Excess of +1.5V
• 10 Milliwatt Pulse Operation of 265 nm AlGaN Light Emitting Diodes
• Metal–Organic Hydride Vapor Phase Epitaxy of AlxGa1-xN Films over Sapphire
• Substrate Lifted-off AlGaN/AlGaN Lateral Conduction Thin-Film Light-Emitting Diodes Operating at 285 nm
• Substrate Lifted-off AlGaN/AlGaN Lateral Conduction Thin-Film Light-Emitting Diodes Operating at 285 nm (Special Issue : Recent Advances in Nitride Semiconductors)

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