First Demonstration of Semipolar Deep Ultraviolet Light Emitting Diode on $m$-Plane Sapphire with AlGaN Multiple Quantum Wells
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概要
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We report on the first demonstration of a semipolar AlGaN based deep ultraviolet (UV) light emitting diode (LED), with a peak emission wavelength of 307 nm. The LED structure was grown on an $m$-plane sapphire substrate using metal organic chemical vapor deposition (MOCVD). A combination of pulsed MOCVD (PMOCVD) grown AlN and a short period AlN/AlGaN superlattice structure was found to be instrumental in achieving singular semipolar structural phase of ($11\bar{2}2$) with a defect density low enough to fabricate the light emitting device. The on-wafer optical output power of the fabricated LED was ${\sim}20$ μW at a dc pump current of 20 mA.
- 2010-04-25
著者
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ASIF KHAN
Department of EE, University of South Carolina
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Balakrishnan Krishnan
Department Of Electrical Engineering University Of South Carolina
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Adivarahan Vinod
Nitek Inc.
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Fareed Qhalid
Nitek Inc.
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Asif Khan
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
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Mohamed Lachab
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
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Bin Zhang
Nitek Inc., Irmo, SC 29063, U.S.A.
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Krishnan Balakrishnan
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
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Vinod Adivarahan
Nitek Inc., Irmo, SC 29063, U.S.A.
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