Robust 290 nm Emission Light Emitting Diodes over Pulsed Laterally Overgrown AlN
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概要
- 論文の詳細を見る
We report 290 nm emission deep ultra-violet light emitting diodes with AlGaN multiple quantum well active regions exhibiting stable cw-powers in excess of 2 mW. For flip-chip packaged devices with an active area of 140 μm2 there was no saturation of the output powers even for DC pump currents up to 60 mA. The light emitting diodes were deposited over 17-μm-thick high-quality pulsed, laterally overgrown AlN layers over sapphire. From the on-wafer measurement of the thermal degradation of output powers, we estimated the lifetimes to be well over 5000 h. The superior performance of the reported light emitting diodes is attributed to reduced thermal impedance and a lower overall defect density in the laterally overgrown AlN.
- 2007-10-25
著者
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Adivarahan Vinod
Department Of Ee University Of South Carolina
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Khan Asif
Department Of Ece University Of South Carolina
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Fareed Qhalid
Department Of Electrical Engineering University Of South Carolina
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Islam Monirul
Department Of Electrical Engineering University Of South Carolina
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Islam Monirul
Department of Electrical Engineering, University of South Carolina, 301 S. Main Street, Columbia, South Carolina 29208, U.S.A.
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Krishnan Balakrishnan
Department of Electrical Engineering, University of South Carolina, 301 S. Main Street, Columbia, South Carolina 29208, U.S.A.
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Katona Thomas
Department of Electrical Engineering, University of South Carolina, 301 S. Main Street, Columbia, South Carolina 29208, U.S.A.
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