Matrix Addressable Micro-Pixel 280nm Deep UV Light-Emitting Diodes

スポンサーリンク

概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2006-04-25

著者

• Khan Muhammad

  Department Of Electrical Engineering University Of South Carolina

• Sun Wenhong

  Department Of Electrical Engineering University Of South Carolina

• KHAN M.

  Department of Botany, University of Karachi

• Adivarahan Vinod

  Department Of Ee University Of South Carolina

• Wu S

  Tung‐fung Junior Coll. Technol. And Commerce Kaohsiung Twn

• Wu Sean

  Department Of Electrical Engineering National Cheng Kung University

• SHATALOV Maxim

  Department of Electrical Engineering. University of South Carolina

• Shatalov Maxim

  Department Of Electrical Engineering University Of South Carolina

• ASIF KHAN

  Department of EE, University of South Carolina

• YAN Li

  Department of Materials Processing, Graduate School of Engineering, Tohoku University

• WU Shuai

  Department of Electrical Engineering, University of South Carolina

• CHHAJED Sameer

  Department of Electrical Engineering, University of South Carolina

• Khan M.

  Department Of Electrical Engineering University Of South Carolina

• Yan Li

  Department Of Materials Processing Graduate School Of Engineering Tohoku University

• Sun Wei

  Department Of Electrical Engineering University Of South Carolina

• Wu Shuai

  Department Of Electrical Engineering University Of South Carolina

• Chhajed Sameer

  Department Of Electrical Engineering University Of South Carolina

• Yan Li

  Department Of Electrical Engineering University Of South Carolina

関連論文

• The Characterization of Surface Acoustic Wave Modes on Rotated Y-Cut Quartz (ST-X Quartz) with Different AIN Film Thickness
• Temperature Compensation With AlN Film on Y-128° LiNbO_3 : Surfaces, Interfaces, and Films
• The effect of plant growth regulators, nitric oxide, nitrate, nitrite and light on the germination of dimorphic seeds of Suaeda salsa under saline conditions
• Fast Skeletal Muscle Isoforms Exhibit the Highest Incorporation Level into Myofibrils and Stress Fibers among Members of Myosin Alkali Light Chain Isoform Family
• Differential Carrier Lifetime in AlGaN Based Multiple Quantum Well Deep UV Light Emitting Diodes at 325 nm : Semiconductors
• パキスタンのカラチにおいて新生児の泌尿生殖器ハエ症の原因となったクロキンバエ
• Structural Characteristics of Al-Co-Ni Decagonal Quasicrystals and Crystalline Approximants
• Structure of a Pentagonal Quasicrystal in Al_Co_Ni_ Studied by High-Angle Annular Detector Dark-Field Scanning Transmission Electron Microscopy
• Quasiperiodic Superstructure with an Ordered Arrangement of Atom Columnar Clusters in an Al-Ni-Ru Decagonal Quasicrystal with 0.4nm Periodicity : Condensed Matter: Structure, etc.
• Low Insertion-Loss, and Wideband Dual-Mode Bandpass Filters with Dual Perturbation Elements
• Room-Temperature Stimulated Emission from AlN at 214nm
• Low Threshold-14W/mm ZrO_2/AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors
• 10Milliwatt Pulse Operation of 265nm AlGaN Light Emitting Diodes
• Planar Schottky Diodes on High Quality A-plane GaN
• Preparation and Characterization of Lead Zirconate Titanate Thin Films Derived by Hybrid Processing: Sol-Gel Method and Pulsed Laser Deposition
• Ultrasound parameters of bone health and related physical measurement indicators for the community-dwelling elderly in Japan
• Determination of Reference Concentrations of Strontium in Urine by Inductively Coupled Plasma Atomic Emission Spectrometry
• Sputtering Highly C-Axis-Oriented AIN Films on Y-128° LiNbO_3
• Influence of Substrate Temperature to Prepare C-Axis-Oriented AlN Films on Rotated Y-cut Quartz(ST-Quartz)
• Effect of Zr/Ti Ratio in Targets on Electrical Properties of Lead Zirconate Titanate Thin Films Derived by Pulsed Laser Deposition on Template Layer
• Ultraviolet Light Emitting Diodes Using Non-Polar a-Plane GaN-ALGaN Multiple Quantum Wells
• A New Selective Area Lateral Epitaxy Approach for Depositing a-Plane GaN over r-Plane Sapphire
• Lateral Epitaxial Overgrowth of Fully Coalesced A-Plane GaN on R-Plane Sapphire
• Lateral Current Crowding in Deep UV Light Emitting Diodes over Sapphire Substrates
• Pulsed Metalorganic Chemical Vapor Deposition of Quaternary AlInGaN Layers and Multiple Quantum Wells for Ultraviolet Light Emission
• 324 nm Light Emitting Diodes With MilliWatt Powers : Semiconductors
• Submilliwatt Operation of AllnGaN Based Multifinger-Design 315 nm Light Emitting Diode (LED) over Sapphire Substrate : Semiconductors
• Stripe Geometry Ultraviolet Light Emitting Diodes at 305 Nanometers Using Quaternary AlInGaN Multiple Quantum Wells : Semiconductors
• Quaternary AlInGaN Multiple Quantum Wells for Ultraviolet Light Emitting Diodes : Semiconductors
• The Second EF-hand Is Responsible for the Isoform-specific Sorting of Myosin Essential Light Chain
• Matrix Addressable Micro-Pixel 280nm Deep UV Light-Emitting Diodes
• Optically Pumped Lasing at 353nm Using Non-polar a-plane AlGaN Multiple Quantum Wells over r-plane Sapphire
• Micro-pixel Design Milliwatt Power 254nm Emission Light Emitting Diodes
• Sub-Milliwatt Power III-N Light Emitting Diodes at 285 nm
• Determining High Temperature Properties of Weld Materials
• Continuous Wave Milliwatt Power AlGaN Light Emitting Diodes at 280nm
• Formation of Decagonal Quasicrystal in the Al-Pd-Mn System and Its Structure
• Structural Change of Al-Cu-Co Decagonal Quansicrystal Studied by High-Resolution Electron Microscopy
• Large Chip High Power Deep Ultraviolet Light-Emitting Diodes
• Altered expression of vasoactive intestinal peptide receptors in T lymphocytes and aberrant T_h1 immunity in multiple sclerosis
• Biologically Potent New Organotin(IV) Complexes of N-Maleoyltranexamic Acid
• Tiling in Al-Pd-Mn Decagonal Quasicrystal, Studied by High-Resolution Electron Microscopy
• Characterization of AiN Films on Y-128° LiNbO_3 by Surface Acoustic Wave Measurement
• Multiple Acoustical Matching Layer Design of Ultrasonic Transducer for Medical Application
• The summation of series in several variables and its applications in fluid dynamics
• Crystal Polarity Effects on Magnesium Implantation into GaN Layer
• Effects of Phosphorus Implantation on the Activation of Magnesium Doped in GaN
• Provenance and weathering history of Archaean Naharmagra quartzite of Aravalli craton, NW Indian shield : Petrographic and geochemical evidence
• Robust 290 nm Emission Light Emitting Diodes over Pulsed Laterally Overgrown AlN
• Association between the Trail Making Test and physical performance in elderly Japanese
• Preparation and characterisation of fried chicken as a laboratory reference material for the analysis of heterocyclic amines
• A Design Approach of Tonpiltz Transducer(Structure and Mechanical and Thermal Properties of Condensed Matter)
• Clinico-Microbiological and Therapeutic Aspects of Glanders in Equines
• カラチ市在住の少女から見いだされた Lucilia sericata (ヒロズキンバエ)幼虫寄生による頭部血腫の一症例
• In-Process Truing of Metal-Bonded Grinding Wheels by Pulse Width Control in ELID Grinding(Nanoprecision Elid-grinding (continued))
• Robust 285 nm Deep UV Light Emitting Diodes over Metal Organic Hydride Vapor Phase Epitaxially Grown AlN/Sapphire Templates
• Room-Temperature Stimulated Emission from AlN at 214 nm
• A New Two-Dimensional Analytical Threshold Voltage Model for Short-Channel Triple-Material Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors
• First Demonstration of Semipolar Deep Ultraviolet Light Emitting Diode on $m$-Plane Sapphire with AlGaN Multiple Quantum Wells
• 10 Milliwatt Pulse Operation of 265 nm AlGaN Light Emitting Diodes
• Preparation and Characterization of Lead Zirconate Titanate Thin Films Derived by Hybrid Processing: Sol-Gel Method and Pulsed Laser Deposition
• Metal–Organic Hydride Vapor Phase Epitaxy of AlxGa1-xN Films over Sapphire
• Low Threshold-14 W/mm ZrO2/AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field Effect Transistors
• Continuous Wave Milliwatt Power AlGaN Light Emitting Diodes at 280 nm
• Crystalline Structure and Surface Morphology of AlN Films Sputtered on Rotated Y-Cut Quartz (ST-Quartz)
• Theoretical Bulk Acoustic Wave Properties of (103) AlN Films
• Propagation Characteristics of Surface Acoustic Waves in AlN/128° $Y$–$X$ LiNbO3 Structures
• Bulk Acoustic Wave Analysis of Crystalline-Plane-Oriented Aluminum Nitride Films

もっと見る 閉じる

スポンサーリンク