A Design Approach of Tonpiltz Transducer(Structure and Mechanical and Thermal Properties of Condensed Matter)
スポンサーリンク
概要
- 論文の詳細を見る
The Tonpiltz transducer is one of the critical elements in sonar systems. The transducer's properties strongly depend on the number of piezoelectric ceramic segments and mechanical elements such as head mass, tail mass, prestress rod and so on. In this research, the relationship between the physical and electrical characteristics of the Tonpiltz transducer is deduced. The influences of material parameters and mechanical structure are also discussed. An ingenious method is proposed to evaluate the mechanical compliance and effective electromechanical coupling coefficient of the Tonpiltz transducer. A lumped equivalent circuit of the Tonpiltz transducer is also presented to estimate the weight and length of head and tail masses of the transducer, and to simulate the transducer's electrical and physical properties. A practical design example is also developed to confirm the simulation.
- 社団法人応用物理学会の論文
- 2002-06-15
著者
-
Wu Sean
Department Of Electrical Engineering National Cheng Kung University
-
Wu Sean
Department Of Electrical Engineering Tung Fung College Of Technology And Commerce
-
Chen Y‐c
Department Of Electrical Engineering Tung Fung College Of Technology And Commerce
-
Chen Yeong-chin
Department Of Electrical Engineering National Cheng-kung University
-
Chen Yeong-Chin
Department of Computer Science and Information Engineering, Asia University, Taichung, Taiwan 413, R.O.C.
関連論文
- The Characterization of Surface Acoustic Wave Modes on Rotated Y-Cut Quartz (ST-X Quartz) with Different AIN Film Thickness
- Temperature Compensation With AlN Film on Y-128° LiNbO_3 : Surfaces, Interfaces, and Films
- Low Insertion-Loss, and Wideband Dual-Mode Bandpass Filters with Dual Perturbation Elements
- 10Milliwatt Pulse Operation of 265nm AlGaN Light Emitting Diodes
- Sputtering Highly C-Axis-Oriented AIN Films on Y-128° LiNbO_3
- Influence of Substrate Temperature to Prepare C-Axis-Oriented AlN Films on Rotated Y-cut Quartz(ST-Quartz)
- A New Selective Area Lateral Epitaxy Approach for Depositing a-Plane GaN over r-Plane Sapphire
- Lateral Current Crowding in Deep UV Light Emitting Diodes over Sapphire Substrates
- 324 nm Light Emitting Diodes With MilliWatt Powers : Semiconductors
- Submilliwatt Operation of AllnGaN Based Multifinger-Design 315 nm Light Emitting Diode (LED) over Sapphire Substrate : Semiconductors
- Matrix Addressable Micro-Pixel 280nm Deep UV Light-Emitting Diodes
- Micro-pixel Design Milliwatt Power 254nm Emission Light Emitting Diodes
- Analysis and Simulation of Stacked-Segment Electromechanical Transducers with Partial Electrical Excitation by PSPICE
- Characterization of AiN Films on Y-128° LiNbO_3 by Surface Acoustic Wave Measurement
- Multiple Acoustical Matching Layer Design of Ultrasonic Transducer for Medical Application
- Crystal Polarity Effects on Magnesium Implantation into GaN Layer
- Effects of Phosphorus Implantation on the Activation of Magnesium Doped in GaN
- A Design Approach of Tonpiltz Transducer(Structure and Mechanical and Thermal Properties of Condensed Matter)
- A New Two-Dimensional Analytical Threshold Voltage Model for Short-Channel Triple-Material Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors
- Laser Direct Patterning of Organic Dielectric Passivation Layer for Fabricating Amorphous Silicon Thin-Film Transistors
- Crystalline Structure and Surface Morphology of AlN Films Sputtered on Rotated Y-Cut Quartz (ST-Quartz)
- Theoretical Bulk Acoustic Wave Properties of (103) AlN Films
- Propagation Characteristics of Surface Acoustic Waves in AlN/128° $Y$–$X$ LiNbO3 Structures
- Bulk Acoustic Wave Analysis of Crystalline-Plane-Oriented Aluminum Nitride Films