Crystalline Structure and Surface Morphology of AlN Films Sputtered on Rotated Y-Cut Quartz (ST-Quartz)
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概要
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Highly $c$-axis-oriented and fine structural AlN films were successfully prepared on Rotated Y-cut q uartz (ST-quartz) by rf magnetron sputtering. The crystalline structure of the films was determined by X-ray diffraction (XRD) and the surface microstructure of films was quantitatively investigated using an atomic force microscope (AFM). Different rf powers (250 W, 350 W and 450 W) were used to deposit the films. The films prepared in the rf power range of 250–450 W were all polycrystalline hexagonal AlN and had fine surface morphology. The experimental results demonstrate that AlN films deposited in this research were fine structural piezoelectric films. The optimal AlN films prepared at 250 W had small average grain sizes (13.31 nm), uniformity, dense structures and a very smooth top surface ($R_{\text{a}}=1.838$ nm). It is suitable to use low power to deposit AlN films on ST-quartz.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-02-15
著者
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Wu Long
Department Of Electrical Enggineering National Cheng-kung University
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Wu Sean
Department Of Electrical Engineering National Cheng Kung University
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Shen Yu-tang
Department Of Electrical Engineering I-shou University
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Chang Feng-chih
Department Of Electrical Engineering National Cheng Kung University
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Shen Yu-Tang
Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, R.O.C.
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Wu Long
Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, R.O.C.
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Wu Sean
Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, R.O.C.
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Chang Feng-Chih
Department of Applied Chemistry, National Chiao Tung University, Hsinchu, Taiwan
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