Oxygen Plasma Functioning of Charge Carrier Density in Zinc Oxide Thin-Film Transistors
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概要
- 論文の詳細を見る
A change in the charge carrier density of zinc oxide (ZnO) films for control the functioning of thin-film transistors (TFTs) has been studied by oxygen (O<inf>2</inf>) plasma techniques. This effect was interpreted in terms of a threshold voltage shift and the variation in carrier mobility. The plasma-surface interaction on the molecular level and the behavioral characterization of ZnO films were investigated by X-ray photospectroscopy of the O 1s region. This process was highly sensitive at low level variations in defect and doping density. O<inf>2</inf>plasma treatment leads to a shift of turn-on voltage and a reduction of the off-current by more than two orders of magnitude in ZnO-TFTs.
- 2013-07-25
著者
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Liu Po-Tsun
Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University
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Shieh Han-Ping
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao-Tung University, 1001, Ta-Hsueh Rd., Hsinchu 30010, Taiwan, R.O.C.
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Chang Feng-Chih
Department of Applied Chemistry, National Chiao Tung University, Hsinchu, Taiwan
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Meena Jagan
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan, R.O.C.
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Tu Yen-Wei
Department of Electronic Engineering, National Chin-Yi University of Technology, Taichung 41170, Taiwan, R.O.C.
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Ko Fu-Hsiang
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan, R.O.C.
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Chu Min-Ching
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan, R.O.C.
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Liu Po-Tsun
Department of Photonics and Display Institute, National Chiao Tung University, Hsinchu 30010, Taiwan, R.O.C.
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You Hsin-Chiang
Department of Electronic Engineering, National Chin-Yi University of Technology, Taichung 41170, Taiwan, R.O.C.
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