A New Two-Dimensional Analytical Threshold Voltage Model for Short-Channel Triple-Material Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors
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概要
著者
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Wu Sean
Department Of Electrical Engineering National Cheng Kung University
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Lee Maw-shung
Department And Institute Of Electronics Engineering National Kaohsiung University Of Applied Science
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Wang Hsin-kai
Department Of Medical Technology Jen-teh Junior College Of Medicine
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Chiang Te-Kuang
Department of Electrical Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan, R.O.C.
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