A New Two-Dimensional Analytical Model for Short-Channel Symmetrical Dual-Material Double-Gate Metal–Oxide–Semiconductor Field Effect Transistors
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概要
- 論文の詳細を見る
Based on resultant solution of a two-dimensional (2D) Poisson's equation in the silicon region, a new analytical model for short-channel fully depleted, symmetrical dual-material double-gate (SDMDG) metal–oxide–semiconductor field effect transistors (MOSFETs) has been developed. The SDMDG MOSFET exhibits significantly reduced short-channel effects (SCEs) when compared with the symmetrical double-gate (SDG) MOSFET due to the step potential profile at the interface between different gate materials. It is found that the threshold voltage roll-off can be effectively reduced using both the thin Si film and thin gate oxide. A considerable portion of the large workfunction of metal gate 1 (M1) when laterally merged with the small workfunction of metal gate 2 (M2) can efficiently suppress drain-induced barrier lowering (DIBL) and maintain the low threshold voltage degradation. In this work, not only a precise 2D analytical model of the surface potential and threshold voltage is presented, but also the minimum surface potential in M1 of the shorter channel device that brings about subthreshold swing degradation for the SDMDG MOSFET is discussed. The new model is verified to be in good agreement with numerical simulation results over a wide range of device parameters.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-06-15
著者
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Chen Mei-Li
Department of Electro-Optical Engineering, Southern Taiwan University, Tainan 710, Taiwan
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Chen Mei-Li
Department of Electronic Engineering, Southern Taiwan University of Technology, Tainan, Taiwan 710, R.O.C.
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Chiang Te-Kuang
Department of Electrical Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan, R.O.C.
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Chiang Te-Kuang
Department of Electronic Engineering, Southern Taiwan University of Technology, Tainan, Taiwan 710, R.O.C.
関連論文
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- Concise Analytical Threshold Voltage Model for Cylindrical Fully Depleted Surrounding-Gate Metal–Oxide–Semiconductor Field Effect Transistors
- A New Analytical Subthreshold Behavior Model for Single-Halo, Dual-Material Gate Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor
- New Analytical Model for Short-Channel Fully Depleted Dual-Material Gate Silicon-on-Insulator Metal Semiconductor Field-Effect Transistor
- A New Two-Dimensional Analytical Model for Nanoscale Symmetrical Tri-Material Gate Stack Double Gate Metal–Oxide–Semiconductor Field Effect Transistors
- A New Two-Dimensional Analytical Model for Short-Channel Symmetrical Dual-Material Double-Gate Metal–Oxide–Semiconductor Field Effect Transistors
- New Analytical Model for Short-Channel Fully Depleted Dual-Material-Gate Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors