Chiang Te-Kuang | Department of Electrical Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan, R.O.C.
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概要
- Chiang Te-Kuangの詳細を見る
- 同名の論文著者
- Department of Electrical Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan, R.O.C.の論文著者
関連著者
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Chiang Te-Kuang
Department of Electrical Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan, R.O.C.
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Wu Sean
Department Of Electrical Engineering National Cheng Kung University
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Lee Maw-shung
Department And Institute Of Electronics Engineering National Kaohsiung University Of Applied Science
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Wang Hsin-kai
Department Of Medical Technology Jen-teh Junior College Of Medicine
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Chen Mei-Li
Department of Electro-Optical Engineering, Southern Taiwan University, Tainan 710, Taiwan
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Chen Mei-Li
Department of Electronic Engineering, Southern Taiwan University of Technology, Tainan, Taiwan 710, R.O.C.
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Chiang Te-Kuang
Department of Electronic Engineering, Southern Taiwan University of Technology, Tainan, Taiwan 710, R.O.C.
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Chiang Te-Kuang
Department of Electronic Engineering, Southern Taiwan University of Technology, Tainan, Taiwan, R.O.C.
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Chiang Te-Kuang
Department of Electrical Engineering, National University of Kaohsiung, Kaohsiung, Taiwan 81148, R.O.C.
著作論文
- A New Two-Dimensional Analytical Threshold Voltage Model for Short-Channel Triple-Material Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors
- Concise Analytical Threshold Voltage Model for Cylindrical Fully Depleted Surrounding-Gate Metal–Oxide–Semiconductor Field Effect Transistors
- A New Analytical Subthreshold Behavior Model for Single-Halo, Dual-Material Gate Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor
- New Analytical Model for Short-Channel Fully Depleted Dual-Material Gate Silicon-on-Insulator Metal Semiconductor Field-Effect Transistor
- A New Two-Dimensional Analytical Model for Short-Channel Symmetrical Dual-Material Double-Gate Metal–Oxide–Semiconductor Field Effect Transistors
- New Analytical Model for Short-Channel Fully Depleted Dual-Material-Gate Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors