Concise Analytical Threshold Voltage Model for Cylindrical Fully Depleted Surrounding-Gate Metal–Oxide–Semiconductor Field Effect Transistors

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概要

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• On a basis of a quasi-2D potential analysis using the effective conducting path effect (ECPE), a concise analytical model for the threshold voltage in cylindrical fully depleted surrounding-gate (SG) metal–oxide–semiconductor field effect transistors (MOSFETs) is derived. With various depths of the effective conducting path, the minimum channel potential $\Phi_{d_{\text{eff}},\text{min}}$ induced by ECPE is used to develop the threshold voltage model. Besides the increased depth of the effective conducting path, a thin silicon body and a decreased oxide thickness can reduce threshold voltage roll-off simultaneously. It is also observed that the threshold voltage shift depends on the scaling factor. A large scaling factor is preferred to alleviate threshold voltage degradation. This paper not only provides a simple analytical model but also offers an efficient analysis of the threshold voltage of the short-channel cylindrical fully depleted SG MOSFETs.

• 2005-05-15

著者

• Chiang Te-Kuang

  Department of Electrical Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan, R.O.C.

• Chiang Te-Kuang

  Department of Electronic Engineering, Southern Taiwan University of Technology, Tainan, Taiwan, R.O.C.

関連論文

• A New Two-Dimensional Analytical Threshold Voltage Model for Short-Channel Triple-Material Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors
• Concise Analytical Threshold Voltage Model for Cylindrical Fully Depleted Surrounding-Gate Metal–Oxide–Semiconductor Field Effect Transistors
• A New Analytical Subthreshold Behavior Model for Single-Halo, Dual-Material Gate Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor
• New Analytical Model for Short-Channel Fully Depleted Dual-Material Gate Silicon-on-Insulator Metal Semiconductor Field-Effect Transistor
• A New Two-Dimensional Analytical Model for Short-Channel Symmetrical Dual-Material Double-Gate Metal–Oxide–Semiconductor Field Effect Transistors
• New Analytical Model for Short-Channel Fully Depleted Dual-Material-Gate Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

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