New Analytical Model for Short-Channel Fully Depleted Dual-Material Gate Silicon-on-Insulator Metal Semiconductor Field-Effect Transistor
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概要
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On the bassi of the exact solution of the two-dimensional Poisson equation, a new analytical model consisting of two-dimensional potential, threshold voltage, subthreshold current, and subthreshold swing for a short-channel fully depleted dual-material gate silicon-on-insulator (SOI) metal semiconductor field-effect transistor (MESFET) is developed. The model is verified by its good agreement with the numerical simulation of the device simulator. The model not only offers physical insight into the device physics but also provides an efficient device model for the circuit simulation.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-12-25
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