New Analytical Model for Short-Channel Fully Depleted Dual-Material-Gate Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

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概要

• 論文の詳細を見る

• Using the exact solution of the two-dimensional Poisson equation, a new analytical model comprising two-dimensional potential and threshold voltage for short-channel fully depleted dual-material-gate silicon-on-insulator (SOI) metal–oxide–semiconductor field-effect transistors (MOSFETs) is developed. The model shows that the minimum acceptable channel length can be sustained while repressing the short-channel effects if a thin gate oxide and a thin silicon body are employed in the device. Moreover, by increasing the ratio of the screen gate length to control gate length, the threshold voltage roll-off can be more effectively reduced. The model is verified by the close agreement of its results with those of a numerical simulation using the device simulator MEDICI. The model not only offers an insight into the device physics but is also an efficient model for circuit simulation.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2010-07-25

著者

• Chiang Te-Kuang

  Department of Electrical Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan, R.O.C.

• Chiang Te-Kuang

  Department of Electrical Engineering, National University of Kaohsiung, Kaohsiung, Taiwan 81148, R.O.C.

関連論文

• A New Two-Dimensional Analytical Threshold Voltage Model for Short-Channel Triple-Material Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors
• Concise Analytical Threshold Voltage Model for Cylindrical Fully Depleted Surrounding-Gate Metal–Oxide–Semiconductor Field Effect Transistors
• A New Analytical Subthreshold Behavior Model for Single-Halo, Dual-Material Gate Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor
• New Analytical Model for Short-Channel Fully Depleted Dual-Material Gate Silicon-on-Insulator Metal Semiconductor Field-Effect Transistor
• A New Two-Dimensional Analytical Model for Short-Channel Symmetrical Dual-Material Double-Gate Metal–Oxide–Semiconductor Field Effect Transistors
• New Analytical Model for Short-Channel Fully Depleted Dual-Material-Gate Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

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