III–Nitride UV Devices
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概要
- 論文の詳細を見る
The need for efficient, compact and robust solid-state UV optical sources and sensors had stimulated the development of optical devices based on III–nitride material system. Rapid progress in material growth, device fabrication and packaging enabled demonstration of high efficiency visible-blind and solar-blind photodetectors, deep-UV light-emitting diodes with emission from 400 to 250 nm, and UV laser diodes with operation wavelengths ranging from 340 to 350 nm. Applications of these UV optical devices include flame sensing; fluorescence-based biochemical sensing; covert communications; air, water and food purification and disinfection; and biomedical instrumentation. This paper provides a review of recent advances in the development of UV optical devices. Performance of state-of-the-art devices as well as future prospects and challenges are discussed.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-10-15
著者
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Wang H.
Department Of Anatomy And Cell Biology The George Washington University Medical Center
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Khan M.
Department Of Analytical Chemistry University Of Barcelona
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Asif Khan
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29028 U.S.A.
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Shatalov M.
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29028 U.S.A.
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Maruska H.
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29028 U.S.A.
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Kuokstis E.
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29028 U.S.A.
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