Satou Akira | Research Institute Of Electrical Communication Tohoku University
スポンサーリンク
概要
関連著者
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Ryzhii Victor
Computational Nanoelectronics Laboratory University Of Aizu
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Satou Akira
Research Institute Of Electrical Communication Tohoku University
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Ryzhii Victor
Computational Nano-Electronics Laboratory, University of Aizu, Aizuwakamatsu, Fukushima 965-8580, Japan
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RYZHII Victor
Computational Nanoelectronics Laboratory, University of Aizu
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Ryzhii V
Univ. Aizu Fukushima
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SATOU Akira
Research Institute of Electrical Communication, Tohoku University
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Otsuji Taiichi
Research Institute for Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Otsuji Taiichi
Research Institute Of Electrical Communication Tohoku University
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Otsuji Taiichi
Japan Science And Technology Agency Crest
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SATOU Akira
Computer Solid State Physics Laboratory, University of Aizu
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SHUR Michael
Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute
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Ryzhii Victor
Univ. Aizu Aizu‐wakamatsu Jpn
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Shur Michael
Department Of Electrical Electronics And System Engineering Rensselaer Polytechnic Institute
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Shur Michael
Department Of Electrical Computer And System Engineering Rensselaer Polytechnic Institute
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RYZHII Maxim
Computational Nanoelectronics Laboratory, University of Aizu
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Mitin Vladimir
Department Of Electrical And Computer Engineering Wayne State University
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BOUBANGA TOMBET
Research Institute of Electrical Communication, Tohoku University
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Boubanga Tombet
Research Institute Of Electrical Communication Tohoku University
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佐藤 昭
Research Institute of Electrical Communication, Tohoku University
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Ryzhii Victor
Computational Nanoelectronics Laboratory, University of Aizu, Aizuwakamatsu, Fukushima 965-8580, Japan
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Ryzhii Maxim
Computational Nanoelectronics Laboratory, University of Aizu, Aizuwakamatsu, Fukushima 965-8580, Japan
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Satou Akira
Research Institute for Electrical Communication, Tohoku University, Sendai 980-8577, Japan
著作論文
- Resonant Terahertz Detection Based on High-electron-mobility Transistor with Schottky Source/Drain Contact
- Plasma Instability and Terahertz Generation in HEMTs Due to Electron Transit-Time Effect(THz Devices,Heterostructure Microelectronics with TWHM2005)
- Effect of Heating and Cooling of Photogenerated Electron--Hole Plasma in Optically Pumped Graphene on Population Inversion
- Coherent and tunable terahertz emission from nano-metric field effect transistor at room temperature (電子デバイス)