C-10-9 IMPACT OF CAP LAYER ON PLASMA FREQUENCIES IN HEMT-BASED TERAHERTZ DEVICES

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概要

• 論文の詳細を見る
• 社団法人電子情報通信学会の論文
• 2009-09-01

著者

• KHMYROVA Irina

  Computer Solid State Physics Laboratory, University of Aizu

• Khmyrova Irina

  Computational Nanoelectronics Laboratory University Of Aizu

関連論文

• Resonant Detection and Frequency Multiplication in Barrier-Injection Heterostructure Transistors
• Dark Current in Quantum Dot Infrared Photodetectors
• Theoretical Study of Recharging Instability in Quantum Well Infrared Photodetectors
• High-Frequency Characteristics of Quantum Well Infrared Photodetectors with Blocking Barrier
• C-10-9 IMPACT OF CAP LAYER ON PLASMA FREQUENCIES IN HEMT-BASED TERAHERTZ DEVICES
• C-10-9 PLASMA RESONANCES IN MULTI-GATE TERAHERTZ DEVICES WITH 2DEG
• Effect of Photon Recycling in Pixelless Imaging Device
• Resonant Terahertz Photomixing in Integrated High-Electron-Mobility Transistor and Quantum-Well Infrared Photodetector Device
• High-Frequency Characteristics of Quantum Well Infrared Photodetectors with Blocking Barrier
• Plasma Oscillations in Terahertz Photomixing High-Electron-Mobility Transistor Structure on p+-Substrate

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