Tight-Binding Analysis of the Optical Matrix Element in Wurtzite- and Zincblende-GaN Quantum Wells

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1996-05-15

著者

• OHTOSHI Tsukuru

  Central Research Laboratory, Hitachi Ltd.

• NIWA Atsuko

  Central Research Laboratory, Hitachi Ltd.

• Niwa Atsuko

  Central Research Laboratory Hitachi Ltd.

• Kuroda Takao

  Central Research Laboratory Hitachi Ltd.

• Ohtoshi Tsukuru

  Central Research Laboratory Hitachi Ltd.

• NIWA Atsuko

  Central Research Laboratory, Hitachi, Ltd.

• KURODA Takao

  Central Research Laboratory, Hitachi, Ltd.

関連論文

• Laser Diode Integrated with a Low Radiation Loss Thickness-Tapered Beam Expander for Highly Efficient Fiber Coupling
• Morphological Evolution of the InGaN-Based Quantum Well Surface due to a Reduced Density of Threading Dislocations in the Underlying GaN through Higher Growth Pressure
• Optical Properties of GaN Thin Films on Sapphire Substrates Characterized by Variable-Angle Spectroscopic Ellipsometry
• Degradation Characteristics of Ga_Al_xAs Visible Diode Lasers : B-3: LASER
• GaInNAs:A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
• Theoretical Analysis of the Threshold Current Density in GaN/AlGaN Strained Quantum Well Lasers with a Modulation-Doped Structure
• Crystal Orientation Effect on Valence-Subband Structures in Wurtzite-GaN Strained Quantum Wells
• Tight-Binding Analysis of the Optical Matrix Element in Wurtzite- and Zincblende-GaN Quantum Wells
• High Relaxation Oscillation Frequency (beyond 10 GHz) of GaAlAs Multiquantum Well Lasers
• Calculated Threshold Current Densityof Multi-Quantum-Well Wire Lasers
• Analysis of Astigmatism in High-Power Semiconductor Lasers
• Line Shape Functions of Quantum-Box Lasers
• GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

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