Analysis of Astigmatism in High-Power Semiconductor Lasers
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概要
- 論文の詳細を見る
A beam profile near the facet of high-power semiconductor lasers is precisely analyzed using two-dimensional computer simulation. Astigmatism and its optical-power dependence can be accurately predicted in this way. Lasers with effective three-layer stab waveguides (i.e. single-step-index waveguides) in the lateral direction have two beam waists. That is, they have a rather large astigmatic distance that depends on the power. To realize high-power lasers with a small astigmatic distance that is relatively independent of output power, waveguides with a graded-index profile or multi-step-index profile are needed.
- 社団法人応用物理学会の論文
- 1987-01-20
著者
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YAMAGUCHI Ken
Central Research Laboratory, Hitachi, Lid.
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Ohtoshi Tsukuru
Central Research Laboratory Hitachi Ltd.
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Chinone Naoki
Central Research Laboratory Hitachi Ltd.
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Yamaguchi Ken
Central Research Laboratory Hitachi Ltd.
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Yamaguchi Ken
Central Research Laboratory
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