Continuous Operation over 2500 h of Double Heterostructure Laser Diodes with Output Powers More Than 80 mW
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1974-09-05
著者
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Ito Ryoichi
Central Research Laboratory Hitachi Ltd.
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Nakada Osamu
Central Research Laboratory Hitachi Ltd.
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Chinone Naoki
Central Research Laboratory Hitachi Ltd.
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Nakashima Hisao
Central Research Laboratory Hitachi Ltd.
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NAKAMURA Satoshi
Central Research Laboratory, Hitachi, Ltd.
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Nakamura Satoshi
Central Research Laboratory Hitachi Ltd.
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NAKASHIMA Hisao
Central Research Laboratory, Hitachi Ltd.
関連論文
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- High Relaxation Oscillation Frequency (beyond 10 GHz) of GaAlAs Multiquantum Well Lasers
- Continuous Operation over 2500 h of Double Heterostructure Laser Diodes with Output Powers More Than 80 mW
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- Analysis of Astigmatism in High-Power Semiconductor Lasers
- Photoluminescence Study of the Interface between GaAs Epitaxial Layer and its Substrate
- Improvement of Crystal Composition in Ga_Al_xAs LPE Layers Grown under Conditions of Constant Cooling Rate
- Transverse Mode Control and Reduction of Threshold Current in (GaAl)As Buried-Heterostructure Lasers with a Buried Optical Guide
- Photoluminescence Observation of Defects in Silicon : B-3: CRYSTAL GROWTH AND DEFECTS
- X-Ray Topographic Study of Lattice Defects Related with Degradation of GaAs-Ga_Al_xAs Double-Heterostructure Lasers : B-7: SEMICONDUCTOR LASERS (II)
- Growth of Dark Lines from Crystal Defects in GaAs-GaAlAs Double Heterostructure Crystals
- A Simple Method for Obtaining Luminescent Pattern of Double Heterostructure Crystals
- Dependence of the Degradation Rate of Ga_Al_xAs Buried Hetero-Structure Injection Lasers on Optical Flux Density
- Formation of Thin Polyacrylonitrile Films and Their Electrical Properties
- Photoluminescence of Donor Doped GaAs Diffused with Copper
- Carrier Concentration Dependence of Piezoresistance in p-PbTe