Photoluminescence Study of the Interface between GaAs Epitaxial Layer and its Substrate
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概要
- 論文の詳細を見る
Photoluminescence measurements are used to study the cause of abnormal interface phenomena, such as non-ohmic behavior or a dip in the carrier concentration profile observed at the interface between a GaAs vapor epitaxial layer and its substrate. From measurements taken on epitaxial crystals grown at different conditions, the emission band which was supposed to be caused by copper impurities are observed at the interface. Therefore these abnormal interface phenomena are probably associated with copper impurities.
- 社団法人応用物理学会の論文
- 1970-12-05
著者
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Hirao Motohisa
Central Research Laboratory Hitachi Ltd.
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Nakashima Hisao
Central Research Laboratory Hitachi Ltd.
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