Improvement of Crystal Composition in Ga_<1-x>Al_xAs LPE Layers Grown under Conditions of Constant Cooling Rate
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概要
- 論文の詳細を見る
Liquid phase epitaxy of Ga_<1-x>Al_xAs under conditions of a constant cooling rate are analyzed by making use of a diffusion limited growth model. The influence of growth condirions on the AlAs mole fraction in the epitaxial layer as well as the epitaxial layer thickness are investigated in detail. It is shown that the uniform AlAs mole fraction can be obtained by selecting appropriate growth conditions: the cooling rate, solution thickness, and initial supercooling. It is also shown that the dependences of the layer thickness on growth conditions are similar to those of GaAs except for a factor that depends on the AlAs mole fraction.
- 社団法人応用物理学会の論文
- 1978-03-05
著者
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Ito Ryoichi
Central Research Laboratory Hitachi Ltd.
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Doi Atsutoshi
Central Research Laboratory Hitachi Ltd.
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Hirao Motohisa
Central Research Laboratory Hitachi Ltd.
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