Carrier Concentration Dependence of Piezoresistance in p-PbTe

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概要

• 論文の詳細を見る
• 社団法人日本物理学会の論文
• 1965-01-05

著者

• Ito Ryoichi

  Central Research Laboratory Hitachi Ltd.

• Shogenji Kisaburo

  Central Research Laboratory Hitachi Ltd.

関連論文

• Spectral Behaviors of Spontaneously Pulsing Double-Heterostructure Injection Lasers
• Continuous Operation over 2500 h of Double Heterostructure Laser Diodes with Output Powers More Than 80 mW
• Improvement of Crystal Composition in Ga_Al_xAs LPE Layers Grown under Conditions of Constant Cooling Rate
• X-Ray Topographic Study of Lattice Defects Related with Degradation of GaAs-Ga_Al_xAs Double-Heterostructure Lasers : B-7: SEMICONDUCTOR LASERS (II)
• Growth of Dark Lines from Crystal Defects in GaAs-GaAlAs Double Heterostructure Crystals
• A Simple Method for Obtaining Luminescent Pattern of Double Heterostructure Crystals
• Dependence of the Degradation Rate of Ga_Al_xAs Buried Hetero-Structure Injection Lasers on Optical Flux Density
• High Magnetic Field Galvanomagnetic Effects in n-Ge at Impurity Conduction Range
• Carrier Concentration Dependence of Piezoresistance in p-PbTe
• Activation Energies of Impurity Conduction in n-Ge at High Magnetic Fields

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