Characterization of Double-Buffer Layers and Its Application for the Metalorganic Vapor Phase Epitaxial Growth of GaN
スポンサーリンク
概要
- 論文の詳細を見る
Preparation of newly-developed GaN double-buffer layers (DBLs) and their influence on crystalline quality of GaN epilayers grown by metalorganic vapor phase epitaxy (MOVPE) are described. The DBLs are the buffer layer structures which consist of two 10-nm-thick GaN layers deposited successively at different temperatures T1 and T2. We have found that the initial deposition temperature T1 must be higher than the latter deposition temperature T2 to form a smooth DBL, which in turn results in the preparation of high-quality epilayers. Residual strain and threading dislocation in the epilayers can also be effectively reduced by using such a DBLs. The estimated biaxial compressive stress in the 0.8-µm GaN epilayers grown on the DBLs is 0.08–0.09 GPa, while that grown on the single-buffer layer (SBL) is 0.15 GPa.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1998-07-15
著者
-
KONDO Masataka
Imaging Science and Engineering Laboratory Tokyo Institute of Technology
-
Nishida Ken
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
-
Munekata Hiroo
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
-
Uchida Kenji
Central R&d Laboratory Kobayashi Pharmaceutical Co. Ltd.
-
Nishida Ken
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama 226, Japan
-
Munekata Hiroo
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama 226, Japan
関連論文
- Reliability of 780-nm High-Power Laser Diodes with Thin Quantum Well Active Layer
- Magnetization Reversal Process of Submicrometer-Scale Hall Bars of Ferromagnetic Semiconductor p-In_Mn_As
- Morphological Evolution of the InGaN-Based Quantum Well Surface due to a Reduced Density of Threading Dislocations in the Underlying GaN through Higher Growth Pressure
- Optical Properties of GaN Thin Films on Sapphire Substrates Characterized by Variable-Angle Spectroscopic Ellipsometry
- Increased Size of Open Hexagonally Shaped Pits due to Growth Interruption and Its Influence on InGaN/GaN Quantum-Well Structures Grown by Metalorganic Vapor Phase Epitaxy
- Characterization of Double-Buffer Layers and Its Application for the Metalorganic Vapor Phase Epitaxial Growth of GaN
- In Vitro and in Vivo Evaluation of the Efficacy of Bovine Colostrum against Human Rotavirus Infection
- Preparation and Characterization of Fe-Based III-V Diluted Magnetic Semiconductor(Ga, Fe)As
- Three-Step Molecular Beam Deposition of Crystalline Polydiacetylene Films on Semiconductor Substrates with Large Crystal Domains
- Molecular Beam Epitaxy of Wurtzite GaN-Based Magnetic Alloy Semiconductors : Semiconductors
- Binding of Norovirus Virus-Like Particles (VLPs) to Human Intestinal Caco-2 Cells and the Suppressive Effect of Pasteurized Bovine Colostrum on This VLP Binding
- Contribution of Shape Anisotropy to the Magnetic Configuration of (Ga, Mn)As
- Magnetization Reversal Process of Submicrometer-Scale Hall Bars of Ferromagnetic Semiconductor $p$-In0.97Mn0.03As
- High-Power Single-Mode Flared Laser Diode with an Intermediate-Width Stripe at the Flare Base
- Characterization of Double-Buffer Layers and Its Application for the Metalorganic Vapor Phase Epitaxial Growth of GaN
- A Preparation of Cow's Late Colostrum Fraction Containing αs1-Casein Promoted the Proliferation of Cultured Rat Intestinal IEC-6 Epithelial Cells