Multistable Charge Build-Up and a New Switching Principle in Coherent-Electron Tunneling Devices

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概要

• 論文の詳細を見る

• A new mechanism leading to multiple stable operating states in coherent-electron tunneling devices is proposed and numerically verified in a model system. This mechanism utilizes the charge accumulation in virtually bound and quasi-bound states in a quantum-well/barrier structure. The electrostatic energy associated with these states causes the lowest occupied of them to be pinned to the conduction-band edge. For fixed bias, more than one solution to the Poisson equation is found, with each solution being uniquely determined by the quantum number of the pinned state. These different solutions show up as different current branches in the I(V) characteristic of a tunneling diode. Switching between them - for example by using lateral gates - should be very fast, as virtually bound states have a much shorter life time than quasi-bound states.

• 社団法人応用物理学会の論文
• 1993-04-01

著者

• Wagner Mathias

  Central Research Laboratory Hitachi Ltd.

• Mizuta Hiroshi

  Central Research Laboratory Hitachi Ltd.

関連論文

• Simulation of the Effect of Emitter Doping on the Delay Time in AlGaAs/GaAs Heterojunction Bipolar Transistors
• Multistable Charge Build-Up and a New Switching Principle in Coherent-Electron Tunneling Devices
• Numerical Study of Single-Electron Resonant Tunnelling via a Few Ionised Donors in Laterally Confined Resonant Tunnelling Diodes

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