Numerical Study of Single-Electron Resonant Tunnelling via a Few Ionised Donors in Laterally Confined Resonant Tunnelling Diodes

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概要

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• Single-electron resonant tunnelling (RT) assisted by a few ionised donors is studied for a laterally confined resonant tunnelling diode. The 3D multimode scattering matrix (S-matrix) theory is adopted,introducing the discrete scattering potential of background donors in the active device region. With a few ionised donors placed in the device region, the calculated transmission rate clearly shows new resonances which are dependent on the donor configuration. Visualisation of the electron probability density reveals that these resonances originate in RT via single-donor-induced localised states. This new type of RT leads to I-V characteristics with current steps of the order of 0.1 nA per donor before the main current peak, which are in good agreement with experimental results. In addition, the donor-position dependence of the current plateaux and the donor-induced asymmetry of the fine structures are demonstrated.

• 社団法人応用物理学会の論文
• 1996-04-15

著者

• Mizuta Hiroshi

  Central Research Laboratory Hitachi Ltd.

関連論文

• Simulation of the Effect of Emitter Doping on the Delay Time in AlGaAs/GaAs Heterojunction Bipolar Transistors
• Multistable Charge Build-Up and a New Switching Principle in Coherent-Electron Tunneling Devices
• Numerical Study of Single-Electron Resonant Tunnelling via a Few Ionised Donors in Laterally Confined Resonant Tunnelling Diodes

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