High-Speed EA-DFB Laser for 40-G and 100-Gbps
スポンサーリンク
概要
- 論文の詳細を見る
We have developed a high-speed electroabsorption modulator integrated distributed feedback (EA/DFB) lasers. Transmission performance over 10km was investigated under 25Gbps and 43Gbps modulation. In addition, the feasibility of wide temperature range operation was also investigated. An uncooled EA/DFB laser can contribute to the realization of low-power-consumption, small-footprint and cost-effective transceiver module. In this study, we used the temperature-tolerant InGaAlAs materials in an EA modulator. A wide temperature ranged 12km transmission with over 9.6dB dynamic extinction ratio was demonstrated under 25Gbps modulation. A 43Gbps 10km transmission was also demonstrated. The laser achieved a clear, opened eye diagram with a dynamic extinction ratio over 7dB from 25°C to 85°C. The modulated output power was more than +2.9dBm even at 85°C. These devices are suitable for next-generation, high-speed network systems, such as 40Gbps and 100Gbps Ethernet.
- （社）電子情報通信学会の論文
- 2009-07-01
著者
-
SHINODA Kazunori
Central Research Laboratory, Hitachi, Ltd.
-
Tsuji S
Hitachi Ltd. Kokubunji‐shi Jpn
-
Aoki M
Hitachi Ltd. Central Research Laboratory
-
Aoki Masahiro
Hitachi Ltd. Central Research Laboratory
-
Shiota Takashi
Hitachi Ltd. Kokubunji‐shi Jpn
-
Shiota Takashi
Hitachi Ltd. Central Research Laboratory
-
Makino Shigeki
Hitachi Ltd. Central Research Laboratory
-
Kitatani Takeshi
Hitachi Research Laboratory, Hitachi Ltd.
-
Shinoda Kazunori
Hitachi Ltd. Central Research Laboratory
-
HAYASHI Hiroaki
Hitachi, Ltd., Central Research Laboratory
-
TANAKA Shigehisa
Hitachi, Ltd., Central Research Laboratory
-
SASADA Noriko
Opnext Japan, Inc.
-
NAOE Kazuhiko
Opnext Japan, Inc.
-
Kitatani Takeshi
Hitachi Ltd. Central Research Laboratory
-
Sasada Noriko
Opnext Japan Inc.
-
Naoe Kazuhiko
Opnext Japan Inc.
-
Aoki Masahiro
Hitachi Central Research Laboratory
-
Hayashi Hiroaki
Hitachi Ltd. Central Research Laboratory
関連論文
- Amplified Spontaneous Enission Measurement of GaInNAs Laser Wafers With and without Rapid Thermal Annealing
- A 35-GHz, 0.8-A/W and 26-µm Misalignment Tolerance Microlens-Integrated p-i-n Photodiodes
- Renaturation of Recombinant Human Neurotrophin-3 from Inclusion Bodies
- An Efficient Chemical Method for Removing N-terminal Extra Methionine from Recombinant Methionylated Human Growth Hormone
- Widely Tunable Integrated DBR Laser Array with Fast Wavelength Switching
- Numerical Analysis of Beam-Expanders Integrated with Laser Diodes(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
- Laser Diode Integrated with a Low Radiation Loss Thickness-Tapered Beam Expander for Highly Efficient Fiber Coupling
- Beam Expander-Integrated Lasers Grown by Single-Step MOVPE
- Highly Reliable Operation of InGaAlAs Waveguide Photodiodes for Optical Access Network Systems
- High Responsivity, Low Dark Current, and Highly Reliable Operation of InGaAIAs Waveguide Photodiodes for Optical Hybrid Integration (Special Issue On Devices, Packaging Technology, and Subsystems for the Optical Access Network)
- Passive Aligned Hybrid Integrated WDM Transceiver Module Using Planar Lightwave Circuit Platform (Special Issue On Devices, Packaging Technology, and Subsystems for the Optical Access Network)
- Passive Coupling of a Single Mode Optical Waveguide and a Laser Diode/Waveguide Photodiode for a WDM Transceiver Module (Special Issue on Optical Access Networks toward Life Enhancement)
- Fundamental Properties and Characteristics of a Gas-Sensitive Device, Made of a Surface Acoustic Wave Device and Langmuir-Blodgett Film, Used in a Recognition System for Odoriferous Gases
- Gassensitivity of Modified Surfaces of a Surface Acoustic Wave Device by Chemical Adsorption Technique and Langmuir-Blodgett Technique
- Anode Electropolished Stainless Steel with an Oxidized Surface as a New Substrate Material for the Langmuir-Blodgett Technique
- Changes in Targeting Efficiencies of Proteins to Plant Microbodies Caused by Amino Acid Substitutions in the Carboxy-terminal Tripeptide
- Vertical Transport Properties of Photogenerated Carrier in InGaAs/GaAs Strained Multiple Quantum Welts
- Sub 1V Swing Internal Bus Architecture for Future Low-Power ULSI's (Special Section on the 1992 VLSI Circuits Symposium)
- In situ Deep Etching for an InGaAlAs Buried Heterostructure by Using HCl Gas in a Metalorganic Vapor Phase Epitaxy Reactor
- Spatial distribution patterns of the sponge-dwelling gnathiid isopod Elaphognathia cornigera (Nunomura) on an intertidal rocky shore of the Izu Peninsula, southern Japan
- SPECIFICITY OF AMINO ACID SEQUENCES AT CARBOXY TERMINAL TRIPEPTIDE THAT FUNCTION AS A MICROBODY TARGETING SIGNAL.
- Half-V_ltCCgt Plate Nonvolatile DRAMs with Ferroelectric Capacitors
- High-Speed EA-DFB Laser for 40-G and 100-Gbps
- Compact and Low-Power-Consumption 40-Gbit/s, 1.55-μm Electro-Absorption Modulators(Optical Active Devices and Modules, Recent Progress in Optoelectronics and Communications)
- Beam-Shaping Technique for End-Pumping Yb-Doped Fiber Laser with Two Laser-Diode Arrays
- Beam Combining for Three High-Power Laser-Diode Stacks with a Stripe Mirror Technique
- High-Reflectivity InGaP/GaAs Multilayer Reflector Grown by MOCVD for Highly Reliable 0.98-μm Vertical-Cavity Surface-Emitting Lasers
- A 35-GHz, 0.8-A/W and 26-μm Misalignment Tolerance Microlens-Integrated p-i-n Photodiodes
- Effects of Rapid Thermal Annealing on Bias-Stress-Induced Base Leakage in InGaP/GaAs Collector-Up Heterojunction Bipolar Transistors Fabricated with B Ion Implantation(High-Speed HBTs and ICs,Heterostructure Microelectronics with TWHM2005
- Recent Trend in High-Speed/Low-Power-Consumption Light Sources for MAN/Ethernet Applications
- Comparison of Photoconductive Response Times of InGaAs/InAlAs and InGaAs/InGaAsP Multi-Quantum Well Waveguide Modulators
- Wide-Tuning-Wavelength-Range LGLC Laser with Low-Loss Dual-Core Spot Size Converter
- In situ Deep Etching for an InGaAlAs Buried Heterostructure by Using HCl Gas in a Metalorganic Vapor Phase Epitaxy Reactor