In situ Deep Etching for an InGaAlAs Buried Heterostructure by Using HCl Gas in a Metalorganic Vapor Phase Epitaxy Reactor

概要

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Aiming at avoiding strong surface oxidization at the regrowth interface of InGaAlAs materials, we investigated hydrogen-chloride (HCl) in situ gas etching of various materials in a metalorganic–vapor–phase–epitaxy (MOVPE) reactor. The etching patterns at the mask edge in all cases were limited by the (111)B plane. The etching rates for InP and InGaAs were similar. In the case of InGaAlAs, the etching rate decreased because surface oxidization occurred at a higher aluminum content. Moreover, in the case of InAlAs, in situ gas etching was not possible without an InP cap layer. Furthermore, after HCl in situ mesa etching, a high crystalline quality was obtained, even in the case of InP regrowth on an InGaAlAs structure.
Japan Society of Applied Physicsの論文
2004-10-01