Gassensitivity of Modified Surfaces of a Surface Acoustic Wave Device by Chemical Adsorption Technique and Langmuir-Blodgett Technique
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-10-15
著者
-
Ishimoto Coe
Sony Corporation Research Center
-
Ishimoto C
Sony Corp. Rsearch Center Yokohama
-
Aoki M
Hitachi Ltd. Central Research Laboratory
-
OHNISHI Michihiro
Sony Corporation Research Center
-
AOKI Masahiro
Sony Corporation Research Center
-
ISHIBASHI Tadashi
Sony Corporation Research Center
-
Aoki Masahiro
Hitachi Ltd. Central Research Laboratory
-
Aoki M
Univ. Tsukuba Shizuoka Jpn
-
Ohnishi Michitoshi
Sony Corporation Research Center
関連論文
- Amplified Spontaneous Enission Measurement of GaInNAs Laser Wafers With and without Rapid Thermal Annealing
- Widely Tunable Integrated DBR Laser Array with Fast Wavelength Switching
- Numerical Analysis of Beam-Expanders Integrated with Laser Diodes(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
- Laser Diode Integrated with a Low Radiation Loss Thickness-Tapered Beam Expander for Highly Efficient Fiber Coupling
- Beam Expander-Integrated Lasers Grown by Single-Step MOVPE
- Fundamental Properties and Characteristics of a Gas-Sensitive Device, Made of a Surface Acoustic Wave Device and Langmuir-Blodgett Film, Used in a Recognition System for Odoriferous Gases
- Gassensitivity of Modified Surfaces of a Surface Acoustic Wave Device by Chemical Adsorption Technique and Langmuir-Blodgett Technique
- Anode Electropolished Stainless Steel with an Oxidized Surface as a New Substrate Material for the Langmuir-Blodgett Technique
- Laser Patterning Method for Integrated Type a-Si Solar Cell Submodules
- Preparation and Properties of a-SiGe:H:F Films by a Glow Discharge Decomposition
- Changes in Targeting Efficiencies of Proteins to Plant Microbodies Caused by Amino Acid Substitutions in the Carboxy-terminal Tripeptide
- A Laser Welding and Scribing (LWS) Method for a High-Yield Integrated-Type a-Si Solar Cell
- Preparation of a-Si and a-Si-Alloy Films Using an Ion-Gun Chemical Vapor Deposition Method
- Amorphous Silicon-Carbon Alloy Prepared by the CMP (Controlled Plasma Magnetron) Method
- Preparation and Properties of a-Si Films Deposited at a High Deposition Rate under a Magnetic Field
- Obserbation of the Adsorption of Cytochrome c and Glucose Oxidase onto an Amphiphilic Monolater at an Air/Water Interface by the Reflection Spectroscopy of Visible Radiation
- Sub 1V Swing Internal Bus Architecture for Future Low-Power ULSI's (Special Section on the 1992 VLSI Circuits Symposium)
- Preparation and Properties of a-SiGe:H Films Fabricated with a Super Chamber (Separated Ultra-High Vacuum Reaction Chamber)
- Preparation and Properties of High-Quality a-Si Films with a Super Chamber : Separated Ultra-High Vacuum Reaction Chamber
- Superlattice Structure a-Si Films Fabricated by the Photo-CVD Method and their Application to Solar Cells
- A New Analytical Method of Amorphous Silicon Solar Cells
- Light-Induced Effect of a-Si Films Fabricated Using the Super Chamber
- In situ Deep Etching for an InGaAlAs Buried Heterostructure by Using HCl Gas in a Metalorganic Vapor Phase Epitaxy Reactor
- High-Rate Deposition of a-Si:H Film with a Separated Plasma Triode Method
- Preparation and Photovoltaic Characteristics of a-Si Solar Cells Produced by a Consecutive, Separated Reaction Chamber Method : III-2: AMORPHOUS SOLAR CELLS (1) : Proparation Process
- Spatial distribution patterns of the sponge-dwelling gnathiid isopod Elaphognathia cornigera (Nunomura) on an intertidal rocky shore of the Izu Peninsula, southern Japan
- SPECIFICITY OF AMINO ACID SEQUENCES AT CARBOXY TERMINAL TRIPEPTIDE THAT FUNCTION AS A MICROBODY TARGETING SIGNAL.
- Half-V_ltCCgt Plate Nonvolatile DRAMs with Ferroelectric Capacitors
- High-Speed EA-DFB Laser for 40-G and 100-Gbps
- Compact and Low-Power-Consumption 40-Gbit/s, 1.55-μm Electro-Absorption Modulators(Optical Active Devices and Modules, Recent Progress in Optoelectronics and Communications)
- Energy Conversion Process of p-i-n Amorphous Si Solar Cells
- Properties and Photovoltaic Characteristics of a-SiC : H Film : III-3: AMORPHOUS SOLAR CELLS (2) : Characterization
- Analysis of the Photovoltaic Characteristics of p-i-n a-Si Solar Cells : III-3: AMORPHOUS SOLAR CELLS (2) : Characterization
- A New Integrated Type Amorphous Si Solar Cell : III-4: AMORPHOUS SOLAR CELLS : Device Performances
- A 35-GHz, 0.8-A/W and 26-μm Misalignment Tolerance Microlens-Integrated p-i-n Photodiodes
- Recent Trend in High-Speed/Low-Power-Consumption Light Sources for MAN/Ethernet Applications
- Amorphous Si Photovoltaic Cells and Cell Module : Integrated Cell Module : II-3: AMORPHOUS SEMICONDUCTOR PHOTOVOLTAIC DEVICES