New Plamar Two-Mode Channel Field-Effect Transistor Suitable for L-Band Microwave Monolithic Integrated Circuits with RF Transmission and Reception Blocks Operating at V_<dd>≤2 V

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Excellent Thermally Stable Epitaxial Channel for Implanted Planar-Type Heterojunction Field-Effect Transistors
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Relationship between Low-Noise Performance and Electron Confinement in the Channel of Two-Mode Channel Field-Effect Transistors in a Low-Drain-Current Condition
New Plamar Two-Mode Channel Field-Effect Transistor Suitable for L-Band Microwave Monolithic Integrated Circuits with RF Transmission and Reception Blocks Operating at V_≤2 V
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Excellent Thermally Stable Epitaxial Channel for Implanted Planar-Type Heterojunction Field-Effect Transistors

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