SAWADA Minoru | Microelectronics Research Center, SANYO Electric Co., Ltd.
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概要
関連著者
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SAWADA Minoru
Microelectronics Research Center, SANYO Electric Co., Ltd.
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INOUE Daijiro
Microelectronics Research Center, SANYO Electric Co., Ltd.
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Inoue Daijiro
Microelectronics Research Center Sanyo Electric Co. Ltd.
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Inoue Daijiro
Materials & Devices Development Center Bu Sanyo Electric Co. Ltd.
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Harada Yasoo
Microelectronics Research Center, SANYO Electric Co.,Ltd
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Harada Yoshinao
Ulsi Process Technology Development Center Matsushita Electronics Corporation
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Harada Yoshinao
Ulsi Process Technology Development Center Matsushita Electronics Corp.
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MATSUMURA Kohji
Microelectronics Research Center, SANYO Electric Co., Ltd.
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Harada Yasoo
Microelectronics Research Center, SANYO Electric Co., Ltd.,
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Terada Satoshi
Microelectronics Research Center Sanyo Electric Co. Ltd.
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Harada Y
Univ. Tokyo Tokyo Jpn
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Harada Y
Life Culture Department Seitoku University
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Sawada M
Materials And Devices Development Center Business Unit Sanyo Electric Co. Ltd.
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MATSUSHITA Shigeharu
Microelectronics Research Center, SANYO Electric Co., Ltd.
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Matsushita Shigeharu
Microelectronics Research Center Sanyo Electric Co. Ltd.
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Sawada Minoru
Central Research Laboratories Zeria Pharmaceutical Co. Ltd.
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Shono Masayuki
Materials And Devices Development Center Business Unit Sanyo Electric Co. Ltd.
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Hiroyama Ryoji
Materials & Devices Development Center Bu Sanyo Electric Co. Ltd.
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Nomura Yasuhiko
Materials And Devices Development Center Business Unit Sanyo Electric Co. Ltd.
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FUJII Emi
Microelectronics Research Center, SANYO Electric Co., Ltd.
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HIROYAMA Ryoji
Microelectronics Research Center, SANYO Electric Co., Ltd.
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NOMURA Yasuhiko
Microelectronics Research Center, SANYO Electric Co., Ltd.
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SHONO Masayuki
Microelectronics Research Center, SANYO Electric Co., Ltd.
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Fujii Emi
Microelectronics Research Center Sanyo Electric Co. Ltd.
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Matsumura K
Microelectronics Research Center Sanyo Electric Co. Ltd.
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Hiroyama Ryoji
Microelectronics Research Center Sanyo Electric Co. Ltd.
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Matsumura Kiichiro
Pioneering Research And Development Laboratories Toray Industries Inc.
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上田 裕清
神戸大学 大学院工学研究応用化学専攻
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Nakamoto Hiroyuki
Microelectronics Research Center Sanyo Electric Co. Ltd.
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Ueda Yasuhiro
Microelectronics Research Center, SANYO Electric Co., Ltd.
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BANBA Seiichi
Microelectronics Research Center, SANYO Electric Co., Ltd.
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Banba Seiichi
Microelectronics Research Center Sanyo Electric Co. Ltd.
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Ueda Yasuhiro
Materials And Devices Development Center Business Unit Sanyo Electric Co. Ltd.
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YODOSHI Keiichi
Microelectronics Research Center, SANYO Electric Co., Ltd.
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Yodoshi Keiichi
Microelectronics Research Center Sanyo Electric Co. Ltd.
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Inoue Daijiro
Microelectronics Research Center, SANYO Electric Co., Ltd.,
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Sawada Minoru
Microelectronics Research Center, SANYO Electric Co., Ltd.,
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Matsumura Kohji
Microelectronics Research Center, SANYO Electric Co., Ltd.,
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Terada Satoshi
Microelectronics Research Center, SANYO Electric Co., Ltd.,
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Fujii Emi
Microelectronics Research Center, SANYO Electric Co., Ltd.,
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Banba Seiichi
Microelectronics Research Center, SANYO Electric Co., Ltd.,
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Matsushita Shigeharu
Microelectronics Research Center, SANYO Electric Co., Ltd.,
著作論文
- Quantification of Electrical Deactivation by Triply Negative Charged Ga Vacancies in Highly Doped Thin GaAs Layers
- Excellent Thermally Stable Epitaxial Channel for Implanted Planar-Type Heterojunction Field-Effect Transistors
- Excellent Thermally-Stable Epitaxial Channel for Implanted Planar-Type Hetero-Junction Field-Effect Transistors
- Relationship between Low-Noise Performance and Electron Confinement in the Channel of Two-Mode Channel Field-Effect Transistors in a Low-Drain-Current Condition
- New Plamar Two-Mode Channel Field-Effect Transistor Suitable for L-Band Microwave Monolithic Integrated Circuits with RF Transmission and Reception Blocks Operating at V_≤2 V
- Reduction in Operating Current of High-Power 660nm Laser Diodes Using a Transparent AlGaAs Cap Layer
- Reduction in Operating Current of High-Power 660-nm Laser Diodes Using a Transparent AlGaAs Cap Layer
- High-Power 660-nm-Band AlGaInP Laser Diodes with a Small Aspect Ratio for Beam Divergence
- Excellent Thermally Stable Epitaxial Channel for Implanted Planar-Type Heterojunction Field-Effect Transistors