High-Power 660-nm-Band AlGaInP Laser Diodes with a Small Aspect Ratio for Beam Divergence
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-02-28
著者
-
Sawada Minoru
Central Research Laboratories Zeria Pharmaceutical Co. Ltd.
-
Shono Masayuki
Materials And Devices Development Center Business Unit Sanyo Electric Co. Ltd.
-
Hiroyama Ryoji
Materials & Devices Development Center Bu Sanyo Electric Co. Ltd.
-
Nomura Yasuhiko
Materials And Devices Development Center Business Unit Sanyo Electric Co. Ltd.
-
INOUE Daijiro
Microelectronics Research Center, SANYO Electric Co., Ltd.
-
SAWADA Minoru
Microelectronics Research Center, SANYO Electric Co., Ltd.
-
HIROYAMA Ryoji
Microelectronics Research Center, SANYO Electric Co., Ltd.
-
NOMURA Yasuhiko
Microelectronics Research Center, SANYO Electric Co., Ltd.
-
SHONO Masayuki
Microelectronics Research Center, SANYO Electric Co., Ltd.
-
Inoue Daijiro
Materials & Devices Development Center Bu Sanyo Electric Co. Ltd.
-
Inoue Daijiro
Microelectronics Research Center Sanyo Electric Co. Ltd.
-
Hiroyama Ryoji
Microelectronics Research Center Sanyo Electric Co. Ltd.
関連論文
- METABOLIC ACTIVATION OF AFLATOXIN B_1 BY HUMAN PLACENTAL MICROSOMES
- Stable expression of CYP3A4 and CYP3A7, adult and fetal-specific forms of cytochrome P450 in human liver, in CHL cells and its application to toxicological testing.
- 221 INTRODUCTION OF CYTOCHROME P-450 cDNAS INTO CULTURED MAMMALIAN CELLS AND THEIR APPLICATION TO IN VITRO TOXICOLOGICAL STUDIES
- Quantification of Electrical Deactivation by Triply Negative Charged Ga Vacancies in Highly Doped Thin GaAs Layers
- Excellent Thermally Stable Epitaxial Channel for Implanted Planar-Type Heterojunction Field-Effect Transistors
- Excellent Thermally-Stable Epitaxial Channel for Implanted Planar-Type Hetero-Junction Field-Effect Transistors
- Relationship between Low-Noise Performance and Electron Confinement in the Channel of Two-Mode Channel Field-Effect Transistors in a Low-Drain-Current Condition
- New Plamar Two-Mode Channel Field-Effect Transistor Suitable for L-Band Microwave Monolithic Integrated Circuits with RF Transmission and Reception Blocks Operating at V_≤2 V
- A Superlow-Noise AlGaAs/InGaAs/GaAs Doped Channel Heterojunction Field-Effect Transistor (DC-HFET) with 0.15-μm Gate Length
- A New High Electron Mobility Transistor (HEMT) Structure with a Narrow Quantum Well Formed by Inserting a Few Monolayers in the Channel
- Operation at 700℃ of 6H-SiC UV Sensor Fabricated Using N^+ Implantation
- Reduction in Operating Current of High-Power 660nm Laser Diodes Using a Transparent AlGaAs Cap Layer
- Reduction in Operating Current of High-Power 660-nm Laser Diodes Using a Transparent AlGaAs Cap Layer
- P-97 Collaborative work to evaluate toxicity on male reproductive organs by repeated dose studies in rats. : 20)Effects of repeated doses of ethlnylestradlol for 2 and 4 weeks.(Proceedings of the 27th Annual Meeting)
- P-79 Influence of food restriction on hematology and urinalysis in Rats 2. : Comjparison of young rats and young-adult rats(Proceedings of the 27th Annual Meeting)
- COLLABORATIVE WORK TO EVALUATE TOXICITY ON MALE REPRODUCTIVE ORGANS BY REPEATED DOSE STUDIES IN RATS : 3)EFFECTS OF REPEATED DOSES OF ETHINYLESTRADIOL FOR 2 AND 4 WEEKS ON THE MALE REPRODUCTIVE ORGANS
- 21B-09-5 Influence of food restriction on hematology and urinalysis in Rats.
- HIGH SUSCEPTIBILITY TO AFLATOXIN B_1 AND BENZO[A]PYRENE OF BALB3T3 A31-1-1 CELLS EXPRESSING MONKEY CYP1A1
- Quantification of Electrical Deactivation by Triply Negative Charged Ga Vacancies in Highly Doped Thin GaAs Layers
- An incident involving blood sucking by a tick in a suburd in Japan
- High-Power 660-nm-Band AlGaInP Laser Diodes with a Small Aspect Ratio for Beam Divergence
- High-Power 200 mW 660 nm AlGaInP Laser Diodes with Low Operating Current
- Excellent Thermally Stable Epitaxial Channel for Implanted Planar-Type Heterojunction Field-Effect Transistors