Hiroyama Ryoji | Materials & Devices Development Center Bu Sanyo Electric Co. Ltd.
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概要
関連著者
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Hiroyama Ryoji
Materials & Devices Development Center Bu Sanyo Electric Co. Ltd.
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Inoue Daijiro
Materials & Devices Development Center Bu Sanyo Electric Co. Ltd.
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Sawada Minoru
Central Research Laboratories Zeria Pharmaceutical Co. Ltd.
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Shono Masayuki
Materials And Devices Development Center Business Unit Sanyo Electric Co. Ltd.
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Nomura Yasuhiko
Materials And Devices Development Center Business Unit Sanyo Electric Co. Ltd.
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INOUE Daijiro
Microelectronics Research Center, SANYO Electric Co., Ltd.
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SAWADA Minoru
Microelectronics Research Center, SANYO Electric Co., Ltd.
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HIROYAMA Ryoji
Microelectronics Research Center, SANYO Electric Co., Ltd.
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NOMURA Yasuhiko
Microelectronics Research Center, SANYO Electric Co., Ltd.
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SHONO Masayuki
Microelectronics Research Center, SANYO Electric Co., Ltd.
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Inoue Daijiro
Microelectronics Research Center Sanyo Electric Co. Ltd.
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Hiroyama Ryoji
Microelectronics Research Center Sanyo Electric Co. Ltd.
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上田 裕清
神戸大学 大学院工学研究応用化学専攻
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Ueda Yasuhiro
Microelectronics Research Center, SANYO Electric Co., Ltd.
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Ueda Yasuhiro
Materials And Devices Development Center Business Unit Sanyo Electric Co. Ltd.
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Shono Masayuki
Materials & Devices Development Center BU, SANYO Electric Co., Ltd., 1-18-13 Hashiridani, Hirakata, Osaka 573-8534, Japan
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Kameyama Shingo
Materials & Devices Development Center BU, SANYO Electric Co., Ltd., 1-18-13 Hashiridani, Hirakata, Osaka 573-8534, Japan
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Tajiri Atsushi
Materials & Devices Development Center BU, SANYO Electric Co., Ltd., 1-18-13 Hashiridani, Hirakata, Osaka 573-8534, Japan
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Sawada Minoru
LED Business Unit, Tottori Sanyo Electric Co., Ltd., 5-318 Tachikawa, Tottori 680-8634, Japan
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Ibaraki Akira
Materials & Devices Development Center BU, SANYO Electric Co., Ltd., 1-18-13 Hashiridani, Hirakata, Osaka 573-8534, Japan
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Inoue Daijiro
Materials & Devices Development Center BU, SANYO Electric Co., Ltd., 1-18-13 Hashiridani, Hirakata, Osaka 573-8534, Japan
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Hiroyama Ryoji
Materials & Devices Development Center BU, SANYO Electric Co., Ltd., 1-18-13 Hashiridani, Hirakata, Osaka 573-8534, Japan
著作論文
- Reduction in Operating Current of High-Power 660nm Laser Diodes Using a Transparent AlGaAs Cap Layer
- Reduction in Operating Current of High-Power 660-nm Laser Diodes Using a Transparent AlGaAs Cap Layer
- High-Power 660-nm-Band AlGaInP Laser Diodes with a Small Aspect Ratio for Beam Divergence
- High-Power 200 mW 660 nm AlGaInP Laser Diodes with Low Operating Current