Development of a super low-noise GaAs FET amplifier for PHS
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概要
- 論文の詳細を見る
The input and output impedance values of an ionimplanted planar GaAs MESFET were successfully reduced without degrading its high-gain and low-noise characteristics in order to develop an ultra-compact and super low-noise MMIC amplifier for the L-band. The MMIC had a noise figure of 1 dB and a gain of 13.5 dB at 3 V, 20 mA and 1.9 GHz, and was mounted in an ultra-compact 6-pin plastic package (CP6).
- 社団法人電子情報通信学会の論文
- 1996-04-26
著者
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Hirai Toshikazu
Microelectronics Research Center Sanyo Electric Co. Ltd
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Honda Keiichi
Microelectronics Research Center Sanyo Electric Co. Ltd
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Sawai Tetsuro
Microelectronics Research Center, SANYO Electric Co.,Ltd
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Nishida Masao
Microelectronics Research Center, SANYO Electric Co.,Ltd
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Yamaguchi Tsutomu
Microelectronics Research Center, SANYO Electric Co.,Ltd
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Murai Shigeyuki
Microelectronics Research Center, SANYO Electric Co.,Ltd
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Harada Yasoo
Microelectronics Research Center, SANYO Electric Co.,Ltd
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Harada Y
Sanyo Electric Co. Ltd. Gifu‐shi Jpn
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Nishida Masao
Microelectronics Research Center Sanyo Electric Co. Ltd
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Sawai Tetsuro
Microelectronics Research Center Sanyo Electric Co. Ltd
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Murai Shigeyuki
Microelectronics Research Center Sanyo Electric Co. Ltd
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Yamaguchi Tsutomu
Microelectronics Research Center Sanyo Electric Co. Ltd
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Harada Yasoo
Microelectronics Research Center, SANYO Electric Co., Ltd.,
関連論文
- Development of a super low-noise GaAs FET amplifier for PHS
- Quantification of Electrical Deactivation by Triply Negative Charged Ga Vacancies in Highly Doped Thin GaAs Layers
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- New Plamar Two-Mode Channel Field-Effect Transistor Suitable for L-Band Microwave Monolithic Integrated Circuits with RF Transmission and Reception Blocks Operating at V_≤2 V
- A High Power-Added Efficiency GaAs Power MESFET and MMIC Operating at a Very Low Drain Bias for Use in Personal Handy Phones (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functioions and Size-Reductions)
- Quantification of Electrical Deactivation by Triply Negative Charged Ga Vacancies in Highly Doped Thin GaAs Layers
- Excellent Thermally Stable Epitaxial Channel for Implanted Planar-Type Heterojunction Field-Effect Transistors