水素ガス導入下におけるSi:C電界放出電子源の経時変化の測定

概要

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We measured current variation of carbonoized silicon-field emitter arrays (Si:C-FEA) in hydrogen (H2) ambient to show durability against hydrogen exposure. We operated both silicon-field emitter arrays (Si-FEA) and Si:C-FEA in H2 atmosphere for 100 hours. Hydrogen gas is one of the major component of total residual pressure in ion implanter. As a result, the emission current from Si-FEA decreased from 20 μA to 8 μA. But the emission current from Si:C-FEA increased from 20 μA to 80 μA. It was shown that the durability of Si:C-FEA against H2 gas was better than that of Si-FEA.
日本真空協会の論文
2007-03-20