シリコン電界放出電子源から放出される電子のエネルギー分析

概要

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We propose the application of silicon field emitter array (Si-FEA) to resolve the problem of wafer charging in the ion implantation process. This article reports experiments conducted to review the basic property of Si-FEA. This time, we measured the energy distribution of electrons emitted from three types of Si-FEA with different number of tips and gate apertures. The result is different from that of platinum field emitter array (Pt-FEA) in some points. First, half bandwidth of Si-FEA distribution is a little smaller than that of Pt-FEA. Second, the energy peak of Si-FEA shifts to lower energy side from Fermi level. Such phenomenon doesnt happen in the energy distribution of Pt-FEA.
日本真空協会の論文
2005-05-20